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New Jersey Semi-Conductor P...
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| Part No. |
MJ16010A MJH16010A
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| OCR Text |
...se noted) characteristic symbol mln tvp max unit off characteristics!!) collector-emitter sustaining voltage (table 1) dc - looma, ib = o) collector cutoff current (vcev = 1000 vdc. vbe(oh) = i.svdc) (vcev = 1000 vdc, vbe(off) = 1.5 vdc, tc... |
| Description |
NPN Silicon Power Transistors
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| File Size |
845.18K /
2 Page |
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| Part No. |
LM353 LM78L08 LM7909 LM711M
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| OCR Text |
... RS 50 KW RS 50 KW 3.0 50 1.5 mln. Typ. 0.7 1.5 30 4.0 1.8 160 3.0 15 20 0.1 0.2 100 2.5 nA mA V/mV V 3.0 Max. 2.0 10 75 Units mV nA nA MW mA V/mV mV mV/C nA nA/C
3
LM101A/LH2101A
PRODUCT SPECIFICATION
Typical Performance Char... |
| Description |
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| File Size |
8,526.81K /
306 Page |
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New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
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| Part No. |
MPS6512
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| OCR Text |
.../w 3c/w " characteristic symbol mln typ max unit off characteristics collector-emitter breakdown voltage dc - 0,6 madc, ib - 0) mps6512, mps6513 mps6514, mps6515 dc - 0.5 madc, ib ? 0) mps65t6 thru mps6518 mps6519 emitter-base breakdown vol... |
| Description |
AMPLIFIER TRANSISTOR
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| File Size |
83.43K /
2 Page |
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New Jersey Semiconductors New Jersey Semi-Conductor P...
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| Part No. |
MRF492A
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| OCR Text |
...se noted) characteristic symbol mln typ m?x unit off characteristics collector-eminer breakdown voltage (ic= loomadc, ib = 0) collector-emitter breakdown voltage (ic * 60 madc, vbe = 0) emitter-base breakdown voltage ie =10 madc. lc = 0) co... |
| Description |
Trans GP BJT NPN 18V 20A 4-Pin Case 211-11 The RF Line
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| File Size |
87.34K /
2 Page |
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New Jersey Semi-Conductor P... New Jersey Semiconductors New Jersey Semi-Conduct...
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| Part No. |
MJH16010 MJH16012 MJIB010 MJI6012
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| OCR Text |
...rwise hmadl characterise symbol mln typ max unit off characteristics (1) collector-emitter susteming voltage dc* 100ma. ig -0) collector cutoff current (vcev = 850 vdc. vbe(qf() -- 1 5 vdc) (vcev = 850 vdc. vbe(off) - 1 5 vdc. tc = 100c) co... |
| Description |
Power Transistors
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| File Size |
120.98K /
3 Page |
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New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
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| Part No. |
MFE960 MFE990
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| OCR Text |
...e noted.) characteristic symbol mln typ max unit off characteristics drain-source breakdown voltage (vgs - 0. id - 1" ml mfe930 mfe960 mfe990 zero gate voltage drain current (vds = maximum rating. vqs = 0) gate-body leakage current (vgs = 1... |
| Description |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
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| File Size |
92.37K /
2 Page |
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New Jersey Semi-Conductor P...
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| Part No. |
BLX65E BLX65ES
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| OCR Text |
...sions in mm 8,5 max [max .12,7. mln *max. 4,9forblx65es. nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by nj semi-conductors is believed to be b... |
| Description |
V.H.F./U.H.F. POWER TRANSISTORS
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| File Size |
67.27K /
2 Page |
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