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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
2SC5198
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| Description |
NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
2SC5200
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| Description |
NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L)
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| Tech specs |
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Official Product Page
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SANYO[Sanyo Semicon Device]
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| Part No. |
2SC5639
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| Description |
Horizontal Deflection Switching Transistors
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
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| File Size |
41.50K /
4 Page |
 View
it Online |
Download Datasheet
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ISAHAYA[Isahaya Electronics Corporation]
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| Part No. |
2SC5636
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| Description |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
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| File Size |
86.03K /
4 Page |
View
it Online |
Download Datasheet |
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ISAHAYA[Isahaya Electronics Corporation]
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| Part No. |
2SC5635
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| Description |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
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| File Size |
93.60K /
4 Page |
View
it Online |
Download Datasheet |
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ISAHAYA[Isahaya Electronics Corporation]
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| Part No. |
2SC5634
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| Description |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
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| File Size |
93.14K /
4 Page |
View
it Online |
Download Datasheet |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SC5632
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| Description |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others
Silicon NPN epitaxial planar type
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| File Size |
44.34K /
2 Page |
View
it Online |
Download Datasheet |
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