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  isd-74 Datasheet PDF File

For isd-74 Found Datasheets File :: 773    Search Time::1.125ms    
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    意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STK850 K850
OCR Text ...s STK850 Table 6. Symbol ISD ISDM Note 1 VSD Note 5 trr Qrr IRRM Source drain diode Parameter Source-drain Current Source-drain C...74 5.01 4.75 0.23 0.45 0.31 0.45 4.22 1.08 1.37 0.24 4.30 3.43 0.22 0.05 0.15 3.48 0.56 1.20 3.90 0....
Description N-CHANNEL 30V - 0.0024 - 30A - PolarPAK-TM STripFETPower MOSFET
N-CHANNEL 30V - 0.0024 Ω - 30A - PolarPAK-TM STripFET Power MOSFET
N-CHANNEL 30V - 0.0024 ヘ - 30A - PolarPAK-TM STripFET⑩ Power MOSFET

File Size 205.00K  /  12 Page

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    IRFBC30AL IRFBC30ALPBF IRFBC30AS IRFBC30ASPBF IRFBC30ASTRL IRFBC30ASTRLPBF IRFBC30ASTRR IRFBC30ASTRRPBF SIHFBC30ASTR-E3

Vishay Siliconix
Part No. IRFBC30AL IRFBC30ALPBF IRFBC30AS IRFBC30ASPBF IRFBC30ASTRL IRFBC30ASTRLPBF IRFBC30ASTRR IRFBC30ASTRRPBF SIHFBC30ASTR-E3 SIHFBC30ASTL-E3 SIHFBC30AS-E3 SIHFBC30AL-E3 SIHFBC30AS SIHFBC30ASTL SIHFBC30ASTR
OCR Text ..., IAS = 3.6 A (see fig. 12). c. ISD 3.6 A, dI/dt 170 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. Uses IRFBC30A/SiHFBC30A data and te...74 7.0 - 55 to + 150 300d W/C mJ A mJ W V/ns C A UNIT V IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC3...
Description Power MOSFET

File Size 847.43K  /  8 Page

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    2N700007 2N7000 2N7002

STMicroelectronics
Part No. 2N700007 2N7000 2N7002
OCR Text ...acteristics Table 6. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current...74.82 23.63 114.17 37.41 TYP. MAX. 44.12 3.94 40.17 19.69 7.88 119.72 103.96 55.13 mils D e ...
Description N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET?/a> Power MOSFET
N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET
N-channel 60V - 1.8ヘ - 0.35A - SOT23-3L / TO-92 STripFET⑩ Power MOSFET

File Size 329.80K  /  14 Page

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    IRLI540N

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRLI540N
OCR Text ...25, IAS = 18A. (See Figure 12) ISD 18A, di/dt 180A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. t=60s, =60Hz Uses IRL540N data and test conditions IRLI540N 1000 TOP VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM ...
Description HEXFET Power MOSFET(HEXFET 功率MOS场效应管) HEXFET功率MOSFET(马鞍山的HEXFET功率场效应管
HEXFET? Power MOSFET

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    STD1NK6008 STQ1HNK60R STQ1HNK60R-AP STN1HNK60 STD1NK60 STD1NK60-1 STD1NK60T4

STMicroelectronics
Part No. STD1NK6008 STQ1HNK60R STQ1HNK60R-AP STN1HNK60 STD1NK60 STD1NK60-1 STD1NK60T4
OCR Text ...ited by safe operating area (1) ISD 1.0A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX. Table 4: Thermal Data DPAK/IPAK Rthj-case Rthj-amb Rth...74 0.24 0.36 0.02 0.80 0.65 0.98 0.16 0.035 0.43 DIM. A1 T T1 T2 d P0 P2 F1, F2 delta H W W0 W1 W...
Description N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET
N-CHANNEL 600V - 8惟 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET
N-CHANNEL 600V - 8ヘ - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET

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    STK32N4LLH5

STMicroelectronics
http://
Part No. STK32N4LLH5
OCR Text ...ns ns ns ns Table 7. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on...74 5.01 4.75 0.23 0.45 0.31 0.45 4.22 1.08 1.37 0.24 4.30 3.43 0.22 0.05 0.15 3.48 0.56 1.20 3.90 0....
Description N-channel 40 V, 0.0017 Ω, 32 A, PolarPAK? STripFET V Power MOSFET
N-channel 40 V, 0.0017 ヘ, 32 A, PolarPAK㈢ STripFET⑩ V Power MOSFET
N-channel 40 V, 0.0017 Ω, 32 A, PolarPAK? STripFET?/a> V Power MOSFET

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    IRF730 SIHF730-E3 SIHF730

Vishay Siliconix
Part No. IRF730 SIHF730-E3 SIHF730
OCR Text ..., IAS = 5.5 A (see fig. 12). c. ISD 5.5 A, dI/dt 90 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91047 S-81291-Rev. A, 16-Jun-08 www.vishay.com 1...
Description Power MOSFET

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    SIHL630-E3 IRL630 SIHL630 IRL630PBF

Vishay Siliconix
Part No. SIHL630-E3 IRL630 SIHL630 IRL630PBF
OCR Text ..., IAS = 9.0 A (see fig. 12). c. ISD 9.0 A, dV/dt 120 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91303 S-Pending-Rev. A, 17-Jul-08 www.vishay.co...
Description Power MOSFET

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    SIHF634 SIHF634-E3 IRF634 IRF634PBF

Vishay Siliconix
Part No. SIHF634 SIHF634-E3 IRF634 IRF634PBF
OCR Text ..., IAS = 8.1 A (see fig. 12). c. ISD 8.1 A, dI/dt 120 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91034 S-81241-Rev. A, 07-Jul-08 www.vishay.com ...
Description Power MOSFET

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    INTERSIL[Intersil Corporation]
Part No. HRF3205S HRF3205 FN4447
OCR Text ...o Drain Current (Note 2) SYMBOL ISD ISDM TEST CONDITIONS MOSFET Symbol Showing The Integral Reverse P-N Junction Diode D MIN - TYP - MAX 100 (Note 1 390 UNITS A A G S Source to Drain Diode Voltage Reverse Recovery Time...
Description 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs
From old datasheet system

File Size 82.24K  /  8 Page

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