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For gma Found Datasheets File :: 438    Search Time::2.109ms    
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    BFR92P

Infineon Technologies AG
Part No. BFR92P
OCR Text ...IC = 15 mA, VCE = 8 V 1G ma gma |S21e|2 15 9.5 - - 12.5 7 - = |S21 / S12 | (k-(k2-1)1/2) 3 Aug-03-2001 BFR92P SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = ...
Description NPN Silicon RF Transistor

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    BFR92T

Infineon Technologies AG
Part No. BFR92T
OCR Text ... fT Ccb Cce Ceb F 3.5 - gma |S21e|2 - 1.8 2.9 - 16 10.5 - 13.5 8 - = |S21 / S12 | (k-(k2-1)1/2 ) 3 Aug-08-2001 BFR92T SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip...
Description RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers and fast non-saturated switches

File Size 68.70K  /  7 Page

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    INFINEON[Infineon Technologies AG]
Part No. BFP196
OCR Text ...Hz f = 1.8 GHz |S21e|2 12.5 6.5 gma 16 10 F 1.5 2.5 Ceb 3.7 Cce 0.3 Ccb 0.97 1.4 fT 5 7.5 typ. max. Unit GHz pF dB 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 3 Jun-22-2001 BFP196 SPICE Parameters (Gummel-Poon Model, Berk...
Description NPN Silicon RF Transistor

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    INFINEON[Infineon Technologies AG]
Part No. BFP196W
OCR Text ...Hz f = 1.8 GHz |S21e|2 12.5 6.5 gma 17.5 11.5 F 1.5 2.5 Ceb 3.7 Cce 0.36 Ccb 1 1.4 fT 5 7.5 typ. max. Unit GHz pF dB 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 3 Jun-22-2001 BFP196W SPICE Parameters (Gummel-Poon Model, B...
Description NPN Silicon RF Transistor

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    INFINEON[Infineon Technologies AG]
Part No. BFP193W
OCR Text ... Symbol min. fT Ccb Cce Ceb F gma |S21e|2 6 - Values typ. 8 0.63 0.33 1.8 max. 0.9 - Unit GHz pF dB 1.3 2.1 - 19.5 13 - 15 9 - = |S21 / S12 | (k-(k2-1)1/2) 3 Aug-09-2001 BFP193W SPICE Parameters (Gum...
Description RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers
NPN Silicon RF Transistor

File Size 74.15K  /  7 Page

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    INFINEON[Infineon Technologies AG]
Part No. BFP183
OCR Text ... - Gms - 1.2 2 21 - gma - 14 - |S21e|2 16.5 11 - = |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2) 3 Aug-10-2001 BFP183 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data ...
Description RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
NPN Silicon RF Transistor

File Size 77.41K  /  7 Page

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    INFINEON[Infineon Technologies AG]
Part No. BFP183W
OCR Text ... Gms - 1.2 2 21.5 - gma - 14.5 - |S21e|2 17 11 - = |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2) 3 Aug-10-2001 BFP183W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data...
Description RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
NPN Silicon RF Transistor

File Size 77.25K  /  7 Page

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    INFINEON[Infineon Technologies AG]
Part No. BFG235
OCR Text ... , f = 900 MHz IP3 40 |S21e|2 6 gma 12 F 2.7 Ceb 15 Cce 1.5 Ccb 2.6 3.6 fT 4 5.5 typ. max. Unit GHz pF dB dBm 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 3 Oct-27-1999 BFG 235 Total power dissipation Ptot = f (TA *, TS...
Description NPN Silicon RF Transistor

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    BFP620E7764

Infineon Technologies AG
Part No. BFP620E7764
OCR Text ...e gain Gms = 21.5 dB at 1.8 GHz gma = 11 dB at 6 GHz Gold metallization for extra high reliability 3 4 Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter 1T is measured on the collector lea...
Description RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

File Size 184.23K  /  7 Page

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    BFP620FE7764

Infineon Technologies AG
Part No. BFP620FE7764
OCR Text ...ble gain Gms = 21 dB at 1.8 GHz gma = 10 dB at 6 GHz * Gold metallization for extra high reliability to p v ie w 4 3 3 4 XYs 2 1 TSFP-4 ACs 1 2 d ir e c tio n o f u n r e e lin g ESD: Electrostatic discharge sensitive devi...
Description C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor

File Size 183.99K  /  6 Page

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For gma Found Datasheets File :: 438    Search Time::2.109ms    
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