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  gen-ii Datasheet PDF File

For gen-ii Found Datasheets File :: 1308    Search Time::3.094ms    
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    SAMSUNG
Part No. K4H561638F
OCR Text ... Latency & Burst Length Strobe Gen. DLL Data Strobe Programming Register LCKE LRAS LCBR LWE LCAS LWCBR CK, CK Timing Register DM I...II IOZ IOH IOL IOH IOL Min 2.3 2.3 0.49*VDDQ VREF-0.04 VREF+0.15 -0.3 -0.3 0.36 0.71 -2 -5 -16.8...
Description DDR SDRAM 256Mb F-die

File Size 203.41K  /  23 Page

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    K4H561638F K4H561638F-TC_LB3 FMB857B K4H560838F-TC_LA2 K4H560838F-TC_LAA K4H560838F-TC_LB0 K4H560838F-TC_LB3 K4H561638F-

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4H561638F K4H561638F-TC_LB3 FMB857B K4H560838F-TC_LA2 K4H560838F-TC_LAA K4H560838F-TC_LB0 K4H560838F-TC_LB3 K4H561638F-TC_LA2 K4H561638F-TC_LAA K4H561638F-TC_LB0 K4H560838F-TC/LA2 K4H560838F-TC/LAA K4H560838F-TC/LB0 K4H560838F-TC/LB3 K4H561638F-TC/LA2 K4H561638F-TC/LAA K4H561638F-TC/LB0 K4H561638F-TC/LB3
OCR Text ... Latency & Burst Length Strobe Gen. DLL Data Strobe LCKE Programming Register LRAS LCBR LWE LCAS LWCBR CK, CK Timing Register D...II IOZ IOH IOL IOH IOL Min 2.3 2.3 0.49*VDDQ VREF-0.04 VREF+0.15 -0.3 -0.3 0.36 0.71 -2 -5 -16.8...
Description 256Mb F-die DDR SDRAM Specification

File Size 326.57K  /  23 Page

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    IRF[International Rectifier]
Vishay Semiconductors
Part No. 52PFR120W 52PFR80W 50PF120 50PF120W 50PF40 50PF40W 50PF80 50PF80W 50PFR120 50PFR120W 50PFR40 50PFR40W 50PFR80 50PFR80W 52PF120 52PF120W 52PF40 52PF40W 52PF80 52PF80W 52PFR120 52PFR40 52PFR40W 52PFR80
OCR Text GEN II DO5 Features High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Leaded version available/ wire version available Low thermal resistance UL approval pending Stud Version ...
Description N/A
STANDARD RECOVERY DIODES GEN II DO5
DIODE 50 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB, PLASTIC, DO-5, 1 PIN, Rectifier Diode

File Size 159.26K  /  7 Page

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    80PFR120W 82PFR120W

International Rectifier
Part No. 80PFR120W 82PFR120W
OCR Text GEN II DO5 Features High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Leaded version available/ wire version available Low thermal resistance UL approval pending Stud Version ...
Description 800V 80A Std. Recovery Diode in a DO-5 package
1200V 80A Std. Recovery Diode in a DO-5 package

File Size 138.51K  /  8 Page

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    97PFR120W 95PFR120W

International Rectifier
Part No. 97PFR120W 95PFR120W
OCR Text GEN II DO5 Features High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Leaded version available/ wire version available Low thermal resistance UL approval pending Stud Version ...
Description 1200V 95A Std. Recovery Diode in a DO-5 package

File Size 586.67K  /  8 Page

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    KMM5324104CKG KMM5324104CK KMM5324004CK KMM5324004CKG

SAMSUNG[Samsung semiconductor]
Part No. KMM5324104CKG KMM5324104CK KMM5324004CK KMM5324004CKG
OCR Text ...ingle +5V10% power supply * 1st Gen. JEDEC standard PDPin & pinout * PCB : Height(1000mil), single sided component PERFORMANCE RANGE Spe...II(L) IO(L) VOH VOL ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 II(L) IO(L) VOH VOL Speed -5 -6 Dont care -5 -6 -5...
Description 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V

File Size 267.85K  /  15 Page

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    MICROPAC[Micropac Industries]
Part No. 53259
OCR Text ...________________________ PULSE GEN (SEE NOTE 1) V DD RL 1 8 IF + VF IF MONITOR RM 200 2 7 VO MONITOR NODE C L = 25 pF (SEE NOTE 2) 3 6 4 5 GND 50% GND 50% IF PULSE = 15 ms WIDTH 90% VO 10% t OFF t ...
Description POWER MOSFET OPTOCOUPLER 400V / 50ohm HERMETICALLY SEALED

File Size 127.65K  /  6 Page

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    HAMAMATSU[Hamamatsu Corporation]
Part No. R1477-06
OCR Text ...su Photonics Norden AB: Smidesv gen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 73...
Description PHOTOMULTIPLIER TUBE

File Size 55.12K  /  4 Page

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    CY7C1514V18 CY7C1514V18-200BZC CY7C1514V18-250BZC CY7C1510V18 CY7C1510V18-200BZC CY7C1510V18-250BZC CY7C1525V18 CY7C1525

CYPRESS[Cypress Semiconductor]
Part No. CY7C1514V18 CY7C1514V18-200BZC CY7C1514V18-250BZC CY7C1510V18 CY7C1510V18-200BZC CY7C1510V18-250BZC CY7C1525V18 CY7C1525V18-167BZC CY7C1525V18-200BZC CY7C1525V18-250BZC CY7C1512V18 CY7C1512V18-167BZC CY7C1512V18-200BZC CY7C1512V18-250BZC CY7C1514V18-167BZC CY7C1510V18-167BZC CY7C1512V18-200BZCES CY7C1512V18-250BZCES
OCR Text ... 22 A(21:0) K K CLK Gen. Control Logic RPS C C DOFF Read Data Reg. 16 Control Logic 8 8 Reg. Reg. 8 Reg. CQ CQ ...II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks are...
Description 72-Mbit QDR-II?SRAM 2-Word Burst Architecture
72-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
72-MBIT QDR-II⒙ SRAM 2-WORD BURST ARCHITECTURE
72-Mbit QDR-II SRAM 2-Word Burst Architecture

File Size 354.19K  /  24 Page

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    K4D263238G-VC K4D263238G-GC36 K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4D263238G-VC K4D263238G-GC36 K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33
OCR Text ... Latency & Burst Length Strobe Gen. Data Strobe (DQS0~DQS3) LCKE Programming Register LRAS LCBR LWE LCAS LWCBR DLL CK,CK LD...II) K4D263238G-GC2A Frequency Cas Latency 350MHz ( 2.86ns ) 4 300MHz ( 3.3ns ) 4 275MHz ( 3.6ns ) 4...
Description 128Mbit GDDR SDRAM

File Size 427.94K  /  20 Page

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For gen-ii Found Datasheets File :: 1308    Search Time::3.094ms    
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