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gate source Datasheet PDF File

For gate source Found Datasheets File :: 67957 Search Time::1.579ms
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				International Rectifier
Part No.	IRF9Z34N IRF9Z34NPBF
OCR Text	...sipation Linear Derating Factor gate-to-source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.35K / 8 Page	View it Online	Download Datasheet

				Rohm
Part No.	RP1L080SN
OCR Text	...drain-source voltage v dss 60 v gate-source voltage v gss ? 20 v continuous i d ? 8.0 a pulsed i dp ? 32 a continuous i s 1.6 a pulsed i sp 32 a power dissipation p d 2.0 w channel temperature t ch 150 ? c range of storage temperature t stg...
Description	4V Drive Nch MOSFET
File Size	1,192.26K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	NX3020NAKT
OCR Text	...in-source voltage - - 30 v v gs gate-source voltage t j = 25 c -20 - 20 v i d drain current v gs = 10 v; t amb = 25 c [1] - - 180 ma static characteristics r dson drain-source on-state resistance v gs = 10 v; i d = 100 ma; t j = 25 c ...
Description	30 V, 180 mA N-channel Trench MOSFET
File Size	233.61K / 13 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	NE55410GR-T3-AZ
OCR Text	...our newmos technol ogy (our wsi gate lateral mos fet), and its nitride surface passivation and quadruple layer aluminum silic on metalizati...source 9 source 2 drain (q2) 10 gate (q1) 3 drain (q2) 11 source 4 drain (q2) 12 drain (q1...
Description	2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
File Size	307.65K / 15 Page	View it Online	Download Datasheet


Part No.	KTK920T
OCR Text	...1 _ g i 1. diode cathode 2. fet gate & diode anode 3. fet drain 4. fet source type name marking lot no. ma n channel mos field effect transistor equivalent circuit characteristic symbol rating unit drain-source-voltage v ds 3 v drain-gate-v...
Description	10 mA, 3 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
File Size	446.35K / 3 Page	View it Online	Download Datasheet

				Kersemi Electronic Co., Ltd. Kersemi Electronic Co., Ltd... Kersemi Electronic Co.,...
Part No.	IRFU6215PBF IRFR6215PBF
OCR Text	...r derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 310 mj i ar avalanche current -6.6 a e ar repetitive avalanche energy 11 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating...
Description	HEXFET? Power MOSFET
File Size	3,836.22K / 10 Page	View it Online	Download Datasheet

				FUJITSU LTD
Part No.	FHX45X
OCR Text	gate source breakdown voltage noise figure associated gain symbol i dss 10 40 85 45 65 - -0.1 -1.0 -2.0 -3.0 - - - 0.55 0.65 10.0 12.0 - v ds = 2v, v gs =0v v ds = 2v, i ds =10ma v ds = 2v, i ds =1ma v ds = 2v, i ds = 10ma, f = 12gh...
Description	KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
File Size	58.27K / 4 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors Alpha & Omega Semicondu...
Part No.	AON6482
OCR Text	...nless otherwise noted 100v v 20 gate-source voltage drain-source voltage 100 units maximum junction-to-ambient a c/w r q ja 14.2 42 20 junction and storage temperature range -55 to 150 c thermal characteristics 70 pulsed drain current c c...
Description	100V N-Channel MOSFET
File Size	242.13K / 6 Page	View it Online	Download Datasheet

				VISHAY SILICONIX
Part No.	SIHF740STRL-GE3
OCR Text	...ain-source voltage v ds 400 v gate-source voltage v gs 20 continuous drain current v gs at 10 v t c = 25 c i d 10 a t c = 100 c 6.3 pulsed drain current a i dm 40 linear derating factor 1.0 w/c linear derating factor (pcb mount) ...
Description	10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
File Size	172.37K / 9 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SI2304BDS08
OCR Text	...drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) a, b t a = 25 c i d 3.2 2.6 a t a = 70 c 2.5 2.1 pulsed drain current i dm 10 continuous source current (diode conduction) a, b i s 0.9 ...
Description	N-Channel 30-V (D-S) MOSFET
File Size	109.99K / 5 Page	View it Online	Download Datasheet

For gate source Found Datasheets File :: 67957 Search Time::1.579ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |