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For fs-a Found Datasheets File :: 41425 Search Time::3.203ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SJ532
OCR Text	... Forward Transfer Admittance \|y fs \| (S) Static Drain to Source on State Resistance vs. Temperature 0.2 Pulse Test 0.16 -10 A 0.12 I D = -20 A -5 A 0.08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -5, -10 A...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.69K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ533
OCR Text	... Forward Transfer Admittance \|y fs \| (S) Static Drain to Source on State Resistance vs. Temperature 0.1 100 30 Forward Transfer Admittance vs. Drain Current 0.08 I D = -50 A V GS = -4 V 0.04 -10 A -20 A -50 A -10,-20A Tc =...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	51.60K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ534
OCR Text	... Forward Transfer Admittance \|y fs \| (S) Static Drain to Source on State Resistance vs. Temperature 0.30 Pulse Test 0.25 0.20 0.15 0.10 0...A I D = -20 A -5, -10 A Forward Transfer Admittance vs. Drain Current 100 30 Tc = -25 C 10 3 75 C...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	51.11K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ535
OCR Text	... Forward Transfer Admittance \|y fs \| (S) Static Drain to Source on State Resistance vs. Temperature 0.1 100 30 Forward Transfer Admittance vs. Drain Current 0.08 I D = -50 A V GS = -4 V 0.04 -10 A -20 A -50 A -10,-20A Tc =...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	53.39K / 9 Page	View it Online	Download Datasheet

				Toshiba Semiconductor Hitachi Semiconductor
Part No.	2SJ539
OCR Text	... Forward Transfer Admittance \|y fs \| (S) Static Drain to Source on State Resistance vs. Temperature 0.5 100 30 10 Forward Transfer ...A) -100 V GS = -4 V -5 A -1,-2 A 0.2 -10 V 0.1 0 -40 0 40 80 Case Temperature 120 ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	52.99K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ540
OCR Text	... Forward Transfer Admittance \|y fs \| (S) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 Forward Transfe...A) -10 0.3 V GS = -4 V I D = -5 A -2 A -1 A -5 A -1, -2 A -10 V 0.2 0.1 0 -40 0 40 80...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.52K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ541
OCR Text	... Forward Transfer Admittance \|y fs \| (S) Static Drain to Source on State Resistance vs. Temperature 0.40 Pulse Test 0.32 Forward Trans...A -10 A -5 A VGS = -4 V -5, -10, -15 A -10 V 0.16 0.08 0 -40 0 40 80 120 160 Case Temperatu...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.02K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ542
OCR Text	... Forward Transfer Admittance \|y fs \| (S) Static Drain to Source on State Resistance vs. Temperature 0.30 Pulse Test 0.25 0.20 0.15 0.10 0...A I D = -20 A -5, -10 A Forward Transfer Admittance vs. Drain Current 100 30 Tc = -25 C 10 3 75 C...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	51.62K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ543
OCR Text	... Forward Transfer Admittance \|y fs \| (S) Static Drain to Source on State Resistance vs. Temperature 0.2 Pulse Test 0.16 -10 A 0.12 I D = -20 A -5 A 0.08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -5, -10 A...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	52.32K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ544
OCR Text	... Forward Transfer Admittance \|y fs \| (S) Static Drain to Source on State Resistance vs. Temperature 0.1 100 30 Forward Transfer Admittance vs. Drain Current 0.08 I D = -50 A V GS = -4 V 0.04 -10 A -20 A -50 A -10,-20A Tc =...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	53.22K / 9 Page	View it Online	Download Datasheet

For fs-a Found Datasheets File :: 41425 Search Time::3.203ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |