| |
|
 |
Wolfson Microelectronics
|
| Part No. |
WM8350GEB/V
|
| OCR Text |
...programmable dc-dc converters, four low-dropout (ldo) regulators and a current limit switch to generate suitable supply voltages for each ...cell lithium batteries. the charge current, termination voltage, and charger time-out are programm... |
| Description |
|
| File Size |
2,628.57K /
339 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Fujitsu
|
| Part No. |
MBM29DL64DF-70
|
| OCR Text |
...s. The device is organized into four physical banks : Bank A, Bank B, Bank C and Bank D, which are considered to be four separate memory arr...cell margin. Typically each sector can be programmed and verified in about 0.5 seconds. Erase is acc... |
| Description |
Flash Memory - single 3V
|
| File Size |
296.34K /
69 Page |
View
it Online |
Download Datasheet |
| |
|
|
Fujitsu
|
| Part No. |
MBM29DL640E90 MBM29DL640E80 MBM29DL640E12
|
| OCR Text |
...s. The device is organized into four physical banks: Bank A, Bank B, Bank C and Bank D, which can be considered to be four separate memory a...cell margin. Typically each sector can be programmed and verified in about 0.5 seconds. Erase is acc... |
| Description |
Flash Memory - single 3V
|
| File Size |
337.35K /
72 Page |
View
it Online |
Download Datasheet |
| |
|
|
IBM Microeletronics
|
| Part No. |
IBMN312164CT3 IBMN312804CT3
|
| OCR Text |
...ronous to positive clock edge ? four banks controlled by bs0/bs1 (bank select) ? programmable cas latency: 2, 3 ? programmable burst length:...cell array row decoder address buffers (14) column decoder sense ampli?ers memory bank 3 cell array ... |
| Description |
128Mb(8Mbit x 4 I/O x 4 Bank) Synchronous DRAM(128M8Mx 4 I/O x 4 同步动态RAM)
128Mb(4Mbit x 8 I/O x 4 Bank) Synchronous DRAM(128M4Mx 8 I/O x 4 同步动态RAM)
|
| File Size |
666.74K /
66 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
