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74HC126U AD9002BJ 44797 1808640 071973 LTC2992 9737E A4L40
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For eds Found Datasheets File :: 1598    Search Time::1.844ms    
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    SGC-4463Z SGC-4463Z1

SIRENZA MICRODEVICES
Part No. SGC-4463Z SGC-4463Z1
OCR Text ...IC 1 http://www.sirenza.com eds-104979 Rev C SGC-4463Z 0.05-4.0 GHz Cascadeable MMIC Amplifier Typical RF Performance at Key Operating Frequencies (Bias Tee) Symbol G OIP3 P1dB IRL ORL S12 NF Parameter Small Signal Gain Output T...
Description 50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block

File Size 279.80K  /  5 Page

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    SBB-2089Z

SIRENZA MICRODEVICES
Part No. SBB-2089Z
OCR Text ...IC 1 http://www.sirenza.com eds-104005 Rev D SBB-2089Z 50-850 MHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies (With Application Circuit) Frequency (MHz) Symbol Parameter Unit 50 70 100 240 400 500 ...
Description 50 - 850 MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier

File Size 130.04K  /  6 Page

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    SBB-2089Z

List of Unclassifed Manufacturers
Part No. SBB-2089Z
OCR Text ...IC 1 http://www.sirenza.com eds-104005 Rev C SBB-2089 50-850 MHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies (With Application Circuit) Frequency (MHz) Symbol Parameter Unit 50 70 100 240 400 500 8...
Description 50 - 850 MHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier

File Size 733.61K  /  6 Page

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    BUK752R3-40C

NXP Semiconductors
Part No. BUK752R3-40C
OCR Text ...6 2.3 m Avalanche ruggedness eds(AL)S non-repetitive drain-source avalanche energy [1] [2] - - 1.2 J Refer to document 9397 750 12572 for further information. Continuous current is limited by package. NXP Semiconducto...
Description N-channel TrenchMOS standard level FET

File Size 215.38K  /  14 Page

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    SPA-1526Z SPA-1526Z-EVB1 SPA-1526Z-EVB2 SPA-1526Z-EVB3

RF Micro Devices
http://
Part No. SPA-1526Z SPA-1526Z-EVB1 SPA-1526Z-EVB2 SPA-1526Z-EVB3
OCR Text ...2006, RF Micro Devices, Inc. eds-105847 Rev D 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 14 SPA-1526Z Absolute Maximum Rat...
Description 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

File Size 373.92K  /  14 Page

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    BUK7226-75A

NXP Semiconductors
Part No. BUK7226-75A
OCR Text ...nd 13 - Avalanche ruggedness eds(AL)S non-repetitive ID = 45 A; Vsup 75 V; drain-source avalanche RGS = 50 ; VGS = 10 V; energy Tj(init) = 25 C; unclamped inductive load [1] Capped at 45 A due to bondwire. - - 215 mJ NX...
Description N-channel TrenchMOS standard level FET

File Size 188.11K  /  13 Page

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    BUK7Y18-75B

NXP Semiconductors
Part No. BUK7Y18-75B
OCR Text ... Unit 118 mJ Table 1. Symbol eds(AL)S Avalanche ruggedness non-repetitive ID = 49 A; Vsup 75 V; drain-source RGS = 50 ; VGS = 10 V; avalanche energy Tj(init) = 25 C; unclamped gate-drain charge ID = 20 A; VDS = 60 V; VGS = 10 V; see ...
Description N-channel TrenchMOS standard level FET

File Size 161.41K  /  14 Page

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    SGC-43631 SGC-4363Z

SIRENZA MICRODEVICES
Part No. SGC-43631 SGC-4363Z
OCR Text ...IC 1 http://www.sirenza.com eds-104977 Rev C SGC-4363Z 0.05-4.0 GHz Cascadeable MMIC Amplifier Typical RF Performance at Key Operating Frequencies (Bias Tee) Symbol G OIP3 P1dB IRL ORL S12 NF Parameter Small Signal Gain Output Th...
Description 50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block

File Size 280.61K  /  5 Page

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    SGC-23631 SGC-2363Z

SIRENZA MICRODEVICES
Part No. SGC-23631 SGC-2363Z
OCR Text ...IC 1 http://www.sirenza.com eds-104973 Rev C SGC-2363Z 0.05-4.0 GHz Cascadeable MMIC Amplifier Typical RF Performance at Key Operating Frequencies (Bias Tee) Symbol G OIP3 P1dB IRL ORL S12 NF Parameter Small Signal Gain Output Th...
Description 50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block

File Size 279.46K  /  5 Page

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    BUK9Y09-40B

NXP Semiconductors N.V.
Part No. BUK9Y09-40B
OCR Text ... Unit 146 mJ Table 1. Symbol eds(AL)S Avalanche ruggedness non-repetitive ID = 75 A; Vsup 40 V; drain-source RGS = 50 ; VGS = 5 V; avalanche energy Tj(init) = 25 C; unclamped gate-drain charge VGS = 5 V; ID = 25 A; VDS = 32 V; see Fi...
Description N-channel TrenchMOS logic level FET 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235

File Size 178.75K  /  14 Page

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