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				KEC(Korea Electronics)
Part No.	KTN222203
OCR Text	... cex =10na(max.) ; v ce =60v, v eb(off) =3v. low saturation voltage : v ce(sat) =0.3v(max.) ; i c =150ma, i b =15ma. complementary to the ktn2907/2907a. ktn2222/2222a electrically similar to 2n2222/2222a. to-92 dim millimeters a b c d f g ...
Description	EPITAXIAL PLANAR NPN TRANSISTOR 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
File Size	403.93K / 5 Page	View it Online	Download Datasheet

				Newhaven Display International, Inc.
Part No.	D0106LT-43-0601
OCR Text	... 40.0 vp-p peak anode voltage eb - 34.0 40.0 vp-p cut-off bias ek - 0 - vdc duty cycle du - 1/8 - - pulse width tp - 100 - us operating temperature topr -20 - + 70 c storage temperature tstg -55 - + 80 c ...
Description	Vacuum Fluorescent Display Specification
File Size	466.90K / 6 Page	View it Online	Download Datasheet

				Kemet Corporation
Part No.	C0603C101J1GAC C0805C220J5GAC7800
OCR Text	...b cb cb cb cb dc dc dc dc dc dc eb eb eb eb eb eb 10 pf 100 f g j k m ab1 ab1 ab1 bb bb bb bb cb cb cb cb cb cb dc dc dc dc dc dc eb eb eb eb eb eb 11 pf 110 f g j k m bb bb bb bb cb cb cb cb cb cb dc dc dc dc dc dc eb eb eb eb eb eb 12 pf ...
Description	C0G Dielectric, 10 ?200 VDC (Commercial Grade) Surface Mount Multilayer Ceramic Chip Capacitors (SMD MLCCs) C0G Dielectric, 10 ?200 VDC (Commercial Grade)
File Size	784.79K / 19 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	BDP954E6327 BDP950-E6327
OCR Text	... emitter-base cutoff current v eb = 4 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 10 ma, v ce = 5 v i c = 500 ma, v ce = 1 v i c = 1 a, v ce = 2 v bdp948,bdp950 bdp954 i c = 1 a, v ce = 2 v h fe 25 85 50 15...
Description	PNP Silicon AF Power Transistors PNP Silicon AF Power Transistors
File Size	529.55K / 8 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	TIP31B
OCR Text	...=4v 1.8 v tip31 v ce =40v; v eb =0 tip31a v ce =60v; v eb =0 tip31b v ce =80v; v eb =0 i ces collector cut-off current tip31c v ce =100v; v eb =0 0.2 ma tip31/31a v ce =30v; i b =0 i ceo collector cut-off current tip31b/...
Description	Silicon NPN Power Transistors
File Size	67.50K / 4 Page	View it Online	Download Datasheet

				ALLEGRO[Allegro MicroSystems] Allegro MicroSystems, Inc.
Part No.	A3952SB A3952SEB A3952SLB A3952SW 3952 A3952KW A3952KEB A3952KB A3952KLB
OCR Text	...ODE PHASE UVLO & TSD EMITTERS 'EB' ONLY ENABLE BRAKE LOGIC SUPPLY REF 1.5 V 9R VCC R Q BLANKING S PWM LATCH +- R GROUND VTH RT TRUTH TABLE 10 ALLOWABLE PACKAGE POWER DISSIPATION IN WATTS 'W' TAB 'B' , 'EB', & '...
Description	FULL-BRIDGE PWM MOTOR DRIVER From old datasheet system DIODE SWITCHING DUAL ISOLATED 75V 250mA-Io 200mW 4ns-trr SOT-363 3K/REEL FULL-BRIDGE PWM MOTOR DRIVER 全桥PWM电机驱动
File Size	194.14K / 16 Page	View it Online	Download Datasheet

				ON SEMICONDUCTOR
Part No.	TIP32
OCR Text	...on pulse approx +11 v v in 0 v eb(off) t 1 approx +11 v v in t 2 turn ? off pulse t 3 t 1 7.0 ns 100 < t 2 < 500 s t 3 < 15 ns duty cycle 2.0% approx ? 9.0 v r b and r c varied to obtain desired current levels. scope r c r b...
Description	3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-220AB
File Size	123.11K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	TIP32C
OCR Text	...p32b : tip32c v ce = - 40v, v eb = 0 v ce = - 60v, v eb = 0 v ce = - 80v, v eb = 0 v ce = - 100v, v ce = 0 - 200 - 200 - 200 - 200 a a a a i ebo emitter cut-off current v eb = - 5v, i c = 0 - 1 ma h fe * dc curr...
Description	PNP Epitaxial Silicon Transistor
File Size	495.95K / 5 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	BFP740FE6327 BFP740F07
OCR Text	... emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 3 a dc current gain i c = 25 ma, v ce = 3 v, pulse measured h fe 160 250 400 - 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculat...
Description	NPN Silicon Germanium RF Transistor
File Size	144.10K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	BFP74009
OCR Text	... emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 3 a dc current gain i c = 25 ma, v ce = 3 v, pulse measured h fe 160 250 400 - 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculatio...
Description	NPN Silicon Germanium RF Transistor
File Size	591.28K / 10 Page	View it Online	Download Datasheet

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