| |
|
 |
SGS Thomson Microelectronics
|
| Part No. |
AN254
|
| OCR Text |
...us withstand voltages up to the bv ces , break- down voltage. in the other regulators (l487, l387a, l47xx and l26xx) the supply to the inter...3, the low energy overvoltages which the devices must resist have very brief rise time and can excee... |
| Description |
LOW/DROP VOLTAGE REGULATORS FOR AUTOMOTIVE ELECTRONICS
|
| File Size |
103.11K /
9 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHF7310SE
|
| OCR Text |
...ngle Event Effects
Parameter
bv DSS
Typ.
400
Units
V
Ion
Ni
LET (Si) (MeV/mg/cm2)
28
Fluence (ions/cm2)
1 x 105
Ra...3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
|
| File Size |
35.65K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
International Rectifier, Corp.
|
| Part No. |
IRHN9150
|
| OCR Text |
...150 product summary part number bv dss r ds(on) i d irhn9150 -100v 0.080 w -22a irhn93150 -100v 0.080 w -22a features: n radiation hardened up to 3 x 10 5 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) h... |
| Description |
HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管（之HEXFET晶体管）
|
| File Size |
97.11K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHM7360SE JANSR2N7391
|
| OCR Text |
...ngle Event Effects
Parameter
bv DSS
Typ.
400
Units
V
Ion
Ni
LET (Si) (MeV/mg/cm2)
28
Fluence (ions/cm2)
1 x 105
Ra...3 - Gate Notes: 1. Dimensioning and Tolerancing per ANSI Y14.5M-1982 2. All dimensions are show in m... |
| Description |
TRANSISTOR N-CHANNEL(bvdss=400V, Rds(on)=0.20ohm, Id=22A)
TRANSISTOR N-CHANNEL(bvdss=400V Rds(on)=0.20ohm Id=22A)
|
| File Size |
90.55K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHNA7260 IRHNA8260
|
| OCR Text |
...ingle Event Effects
Parameter
bv DSS
Typ.
200
Units
V
Ion
Ni
LET (Si) (MeV/mg/cm2)
28
Fluence (ions/cm2)
1 x 105
...3 = SOURCE NOTES: 1 DIMENSIONINGANDTOLERANCINGPERANSIY14.5M-1982 2. CONTROLLINGDIMENSION: INCH 3. DI... |
| Description |
TRANSISTOR N-CHANNEL
|
| File Size |
128.84K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHI7360SE
|
| OCR Text |
...ngle Event Effects
Parameter
bv DSS
Typ.
400
Units
V
Ion
Ni
LET (Si) (MeV/mg/cm2)
28
Fluence (ions/cm2)
1 x 105
Ra...3 - Gate Notes: 1. Dimensioning and Tolerancing per ANSI Y14.5M-1982 2. All dimensions are show in m... |
| Description |
TRANSISTOR N-CHANNEL(bvdss=400V, Rds(on)=0.20ohm, Id=24.3A)
|
| File Size |
83.22K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHI7460SE
|
| OCR Text |
...ngle Event Effects
Parameter
bv DSS
Typ.
500
Units
V
Ion
Ni
LET (Si) (MeV/mg/cm2)
28
Fluence (ions/cm2)
1 x 105
Ra...3 - Gate Notes: 1. Dimensioning and Tolerancing per ANSI Y14.5M-1982 2. All dimensions are show in m... |
| Description |
TRANSISTOR N-CHANNEL(bvdss=500V, Rds(on)=0.32ohm, Id=20A)
|
| File Size |
83.17K /
4 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
