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				Compensated Devices Incorporated CDI-DIODE[Compensated Deuices Incorporated] MICROSEMI CORP
Part No.	CD6916 CD2810 CD5711 CD5712 CD6857 CD6858
OCR Text	...ack: (Cathode)................. Au o AL THICKNESS.................25,000 A Min o GOLD THICKNESS... ..........4,000 A Min CHIP THICKNESS........E-mail: mail@cdi-diodes.com 5.5 MILS VF @ 1 mA VF @ IF 1R @ VR CD2810, CD5711, CD5712...
Description	SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION SILICON, SIGNAL DIODE
File Size	41.52K / 2 Page	View it Online	Download Datasheet

				Hitachi,Ltd. Renesas Electronics Corporation HITACHI[Hitachi Semiconductor] Renesas Technology / Hitachi Semiconductor
Part No.	HD29051P HD29051
OCR Text	...forms Conforms 1.05 g *NI/Pd/AU Plating Rev.3.00, Jul.16.2004, page 10 of 10 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Rene...
Description	Dual Differential Line Drivers/ReceiversWith 3 State Outputs 双差分线路驱动器/ ReceiversWith三态输
File Size	157.75K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHM57160
OCR Text	...t Safe Operating Area Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @V...E R 800 RG D .U .T. IA S 600 + - VD D A VGS 20V tp 400 0 .0 1 Fig 12...
Description	RADIATION HARDENED POWER MOSFET
File Size	122.26K / 8 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LPD200SOT343
OCR Text	.... The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200's active areas are passivated with Si3N4, ...
Description	PACKAGED HIGH DYNAMIC RANGE PHEMT
File Size	66.81K / 2 Page	View it Online	Download Datasheet

				SHARP[Sharp Electrionic Components]
Part No.	LQ9D161
OCR Text	...3 0 I CD (Rll-RX Glwx. au-sa, Vertical jbvalid Ferrical invalid ddt;~ period Fig. 2-Q Input signal wa...e 1 11 Blue GSl5 0 0 0 0 0000 1111 basic color can be displayed in 16 gray scales from 4 bit data...
Description	DEVICE SPECIFICATION FOR TFT-LCD module
File Size	1,011.79K / 20 Page	View it Online	Download Datasheet

				NEC, Corp. NEC[NEC]
Part No.	NE321000 NE321000-
OCR Text	...ration can be accomplished with Au-Sn (within a 300 C - 10 s) performs in a forming gas environment. Epoxy die attach is not recommend. BONDING Bonding wires should be minimum length, semi hard gold wire (3 to 8 % elongation) 20 microns in ...
Description	TRANSISTOR \| JFET \| N-CHANNEL \| 4V V(BR)DSS \| 15MA I(DSS) \| CHIP 晶体管\|场效应\| N沟道\| 4V五（巴西）直\| 15mA的我（直）\|芯片 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
File Size	46.74K / 12 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE32400 NE24200
OCR Text	...ration can be accomplished with Au-Sn (within a 300 C - 10 s) performs in a forming gas environment. Epoxy die attach is not recommend. BONDING Bonding wires should be minimum length, semi hard gold wire (3-8 % elongation) 20 microns in dia...
Description	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
File Size	84.47K / 8 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	S3C44B0X
OCR Text	...ernal interrupt sources EAE/\|AU * 5-ch 16-bit Timer with PWM / 1-ch 16-bit internal timer with DMA-based or interrupt-based operation...E*EOOA1/2 EON3/4-IEOoIUcx1/2o 00 = Crystal(XTAL0,EXTAL0), PLL on 01 = EXTCLK, PLL on 10, 11 = Chi...
Description	RISC MICROPROCESSOR,Chinese-Simplified datasheet 中文
File Size	190.16K / 60 Page	View it Online	Download Datasheet

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