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INTERSIL[Intersil Corporation]
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| Part No. |
HCTS390MS HCTS390D HCTS390DMSR HCTS390HMSR HCTS390K HCTS390KMSR HCTS373T
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| OCR Text |
...CC = 4.5V, VIH = 2.25V, VIL = 0.80V (Note 2)
7, 8A, 8B
1. All voltages referenced to device GND. 2. For functional tests, VO 4.0V is ...9 10, 11 CP1Nn to Q1n TPHL TPLH TPHL TPLH TPHL TPLH TPHL VCC = 4.5V 9 10, 11 CP1Nn to Q2n VCC = 4.5V... |
| Description |
Radiation Hardened Octal Transparent Latch/ Three-State
Radiation Hardened Dual Decade Ripple Counter
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| File Size |
138.50K /
9 Page |
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Advanced Power Electronics, Corp.
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| Part No. |
AP18T10AGH-HF
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| OCR Text |
...in-source leakage current v ds =80v, v gs =0v - - 25 ua drain-source leakage current (t j =125 o c) v ds =80v ,v gs =0v - - 250 ua i gss gat...9.6 nc q gs gate-source charge v ds =80v - 1.7 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4... |
| Description |
9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| File Size |
86.85K /
4 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
HCTS283MS HCTS283D_SAMPLE HCTS283DMSR HCTS283HMSR HCTS283K_SAMPLE HCTS283KMSR HCTS283D/SAMPLE HCTS283K/SAMPLE
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| OCR Text |
...VIH = 2.75V, IOL = 50A, VIL = 0.80V Output Voltage High VOH VCC = 4.5V, VIH = 2.25V, IOH = -50A, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOH = -...9 10, 11 9 10, 11 9 10, 11 9 10, 11 9 10, 11 9 10, 11 9 10, 11 9 10, 11 9 10, 11 9 10, 11 9 10, 11 9... |
| Description |
Radiation Hardened 4 Bit Binary Full Adder with Fast Carry HCT SERIES, 4-BIT ADDER/SUBTRACTOR, CDIP16
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| File Size |
214.91K /
9 Page |
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it Online |
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Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Advanced Power Electron...
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| Part No. |
AP15P10GJ-HF AP15P10GH-HF AP15P10GH-HF-14 AP15P10GJ-HF-14
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| OCR Text |
...e current (t j =125 o c) v ds =-80v, v gs =0v - - -250 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate char...9 1.4 1.9 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-6a v g =... |
| Description |
15 A, 100 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
15 A, 100 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
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| File Size |
97.35K /
4 Page |
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it Online |
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Vishay Intertechnology, Inc.
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| Part No. |
CTS1564X0080A2PE3
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| OCR Text |
...0v & 25v 6.3v 16v 10v 50v & 63v 80v 100v & 125v 100 10 1 0.1 1k 10k 100k 10 100 1m frequency in hertz volts rms 50 0.5 30 2 40 20 5 4 3 0.4 ...9. life test: after 2000 hours at + 85 c with rated dc voltage applied, or after 2000 hours at + 12... |
| Description |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 80 V, 0.56 uF, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
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| File Size |
125.79K /
10 Page |
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it Online |
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SIPEX[Sipex Corporation]
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| Part No. |
SP7655_05 SP7655 SP7655EB SP7655ER
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| OCR Text |
...internal reference voltage of 0.80V. Standard 1% metal film resistors of surface mount size 0603 are recommended. Vout = 0.80V (R1 / R2 + 1 ...9 and 10 show output voltage ripple less than 135mV at no load to 8A load. While data on individual ... |
| Description |
Evaluation Board Manual
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| File Size |
487.87K /
10 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP15P10P
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| OCR Text |
...t=100A/s
Qgs Qgd Qg
VDD =-80V, ID =-15A
-
-4.5 -15.3 -33.4 -5.7
-6.7 -23 -50 -
nC
VDD =-80V, ID =-15A, VGS =0 to -10V
...9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -10.6 A, VGS = -10 V
SPP15P10... |
| Description |
Low Voltage MOSFETs - Power MOSFET, -100V, TO-220, RDSon = 0.24
SIPMOS Small-Signal-Transistor
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| File Size |
82.05K /
8 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
SPP47N10 SPB47N10 SPI47N10
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| OCR Text |
...dt=100A/s
Qgs Qgd Qg
VDD =80V, ID =47A
VDD =80V, ID =47A, VGS =0 to 10V
V(plateau) VDD =80V, ID=47A IS ISM
TC=25C
Page 3
...9.0 9.0 10.0 20.0
m
vgs[V]
80
hc
d e f
70 60 50 40
70 60 50 40 30 20 10 0 0
g
... |
| Description |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=33mOhm, 47A, NL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=33mOhm, 47A, NL
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| File Size |
509.17K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPU11N10 SPD11N10
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| OCR Text |
...se diode dv/dt
IS =10.5A, VDS =80V, di/dt=200A/s, Tjmax =175C
Gate source voltage Power dissipation
TC=25C
Operating and storage tem...9 9.8 18.3 -
nC
V
-
0.93 57 134
10.5 41.2 1.25 71 167
A
V ns nC
2002-01-31
... |
| Description |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=179mOhm, 11A, NL
SIPMOS Power-Transistor
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| File Size |
489.50K /
8 Page |
View
it Online |
Download Datasheet |
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