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645.30 Datasheet PDF File

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				Toshiba Semiconductor
Part No.	SSM6J401TU
OCR Text	...mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit v (br) dss i d = ?1 ma, v gs = 0 v ?30 ? ? drain?source breakdown voltage v (br) ...
Description	TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
File Size	212.24K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCP8601
OCR Text	...s epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 3: on the lower left of the marking indicates Pin 1. * Weekly code (three digits): Week of ma...30 -20 -15 -10 IC -55 Collector current DC current gain -3 100 -2 -8 -6 ...
Description	Silicon PNP Epitaxial Type (PCT Process)
File Size	207.87K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCP8505
OCR Text	...s epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/volt...30 V, RL = 30 - IB1 = -IB2 = 33 mA Min 100 50 400 200 Typ. 40 500 120 Max 100 100 ...
Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process
File Size	200.86K / 5 Page	View it Online	Download Datasheet

				OSRAM GmbH
Part No.	LHR974
OCR Text	...1,25 mm x 0,8 mm * Wellenlange: 645 nm (hyper-rot) * Abstrahlwinkel: extrem breite Abstrahlcharakteristik (160) * Technologie: GaAlAs * opti...30 ... + 85 - 40 ... + 85 + 95 30 Einheit Unit C C C mA Top Tstg Tj IF IFM 0.1 A VR ...
Description	Lead (Pb) Free Product - RoHS Compliant
File Size	238.45K / 12 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPC6603
OCR Text	...s-epoxy; 1.6 mm thick; Cu area, 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/volt...30 V, IE = 0 VEB = -7 V, IC = 0 IC = -10 mA, IB = 0 VCE = -2 V, IC = -0.5 A VCE = -2 V, IC = -1.6 A ...
Description	Transistor Silicon PNP Epitaxial Type
File Size	151.50K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3K302T
OCR Text	...4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) Note: Electrical Characteristics (Ta = 25C) Characteristic Drain-source breakdown voltage Dr...30 V, VGS = 0 VGS = 12 V, VDS = 0 VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 2 A ID = 2.0 A, VGS = 4.0 V ...
Description	Power Management Switch Applications
File Size	164.42K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3K14T07 SSM3K14T
OCR Text	...4 mm x 25.4 mm x 1.6 t, Cu pad: 645 mm ) Note 2: The pulse width limited by max channel temperature. Marking 3 Equivalent Circuit 3 ...30 V, VGS = 0 VDS = 5 V, ID = 0.1 mA VDS = 5 V, ID = 2 A ID = 2 A, VGS = 10 V Drain-Source ON resist...
Description	Silicon N Channel MOS Type DC-DC Converter
File Size	209.61K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3K12T07 SSM3K12T
OCR Text	...4 mm x 25.4 mm x 1.6 t, Cu pad: 645 mm ) Note 2: The pulse width limited by max channel temperature. Handling Precaution When handling i...30 V, VGS = 0 VDS = 5 V, ID = 0.1 mA VDS = 5 V, ID = 1.5 A ID = 1.5 A, VGS = 10 V Drain-Source ON re...
Description	Silicon N Channel MOS Type DC-DC Converter
File Size	209.57K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3K124TU
OCR Text	...4 mm x 25.4 mm x 0.8 t, Cu Pad: 645 mm ) Note 2: Mounted on an FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) Note: 1: Gate...30 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 5 V, ID = 1 mA VDS = 5 V, ID = 1.5 A ID = 1.5 A, VGS = 10 V...
Description	High Speed Switching Applications
File Size	143.43K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3K123TU
OCR Text	...4 mm x 25.4 mm x 0.8 t, Cu Pad: 645 mm2 ) Note 2: Mounted on a FR4 board. (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm2 ) Note: UFM JEDE...30 - 0.8 Max 1 1 1.0 28 32 43 66 - 1.2 Unit V A A V S Drain-Source ON-resistance (N...
Description	Power Management Switch Applications
File Size	155.61K / 6 Page	View it Online	Download Datasheet

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