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Alpha & Omega Semicondu...
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| Part No. |
AON6266
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| OCR Text |
...applications top view 12 3 4 87 6 5 pin1 dfn5x6 top view bottom view g ds v ds v gs i dm i as avalanche energy l=0.1mh c e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r q jc power dissipation b 15 t c... |
| Description |
60V N-Channel AlphaMOS
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| File Size |
365.14K /
6 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AO6808
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| OCR Text |
...2 s1 g2 g1 top view 1 2 3 6 5 4 symbol 10 sec steady state v ds v gs 6 4.6 4.6 3.7 i dm 1.3 0.8 0.8 0.5 t j , t stg parameter symbol typ max t 10s 76 95 steady state 118 150 steady state r jl 54 68 c/w r ja c -55 to 150... |
| Description |
Common-Drain LV MOSFETs (12V - 30V)
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| File Size |
288.93K /
5 Page |
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it Online |
Download Datasheet |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO8802
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| OCR Text |
...=25c unless otherwise noted v v 6.3 30 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c ...19m ? (v gs = 2.5v) r ds(on) < 27m ? (v gs = 1.8v) the ao8802 uses advanced trench technology t... |
| Description |
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
387.63K /
6 Page |
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it Online |
Download Datasheet |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO8804
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| OCR Text |
...=25c unless otherwise noted v v 6.3 30 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c ...19m ? (v gs = 2.5v) r ds(on) < 27m ? (v gs = 1.8v) esd rating: 2000v hbm ... |
| Description |
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
339.94K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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