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  6-9ghz Datasheet PDF File

For 6-9ghz Found Datasheets File :: 791    Search Time::2.125ms    
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    Infineon
Part No. BFP280
OCR Text ...) transition frequency i c = 6 ma, v ce = 5 v, f = 500 mhz f t 5 7.5 ghz - c cb pf - collector-base capacitance v cb = 5 v, f = ...9ghz v ce = parameter 0 2 4 6 8 ma 11 i c 8 10 12 14 16 18 db 22 g 10v 2v 1v 0.7v p...
Description NPN Silicon RF Transistor for low noi...

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    Q62702-F1377 BFP180

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1377 BFP180
OCR Text ...l-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.18519 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS...9GHz VCE = Parameter 20 10V dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 8V dB...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)
From old datasheet system

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    Infineon
Part No. BFP280W
OCR Text ...) transition frequency i c = 6 ma, v ce = 5 v, f = 500 mhz f t 5 7.5 ghz - c cb pf - collector-base capacitance v cb = 5 v, f = ...9ghz v ce = parameter 0 2 4 6 8 ma 11 i c 8 10 12 14 16 18 db 22 g 10v 2v 1v 0.7v p...
Description NPN Silicon RF Transistor for low noi...

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    Mitsubishi Electric Corporation
Part No. MGF0915A
OCR Text ...ck side pattern 2.5 (unit:mm) 0.6 2.0 0.8 (1) (3) gate mark 2.8 1.20 reference plane reference plane freq. k mag/msg (mhz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) (db) 600 0.948 -145.92 4.852 99.38 0.013 24.42 0.721 -177.51 0.38 25....
Description L & S BAND GaAs FET[ SMD non - matched ]

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    Q62702-F1490 BFR180W

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1490 BFR180W
OCR Text ...Hz Transducer gain |S21e|2 8.5 6 13.5 10.5 - IC = 1 mA, VCE = 5 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| Semiconduc...9GHz VCE = Parameter 18 dB 16 10V 3V 2V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter ...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)
From old datasheet system

File Size 56.55K  /  7 Page

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    BFS482 Q62702-F1573

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS482 Q62702-F1573
OCR Text ... Q62702-F1573 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collector-emit...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 8V dB 10V 5V...
Description NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.)
From old datasheet system

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    NJR Corporation
Part No. NJG1657MD7
OCR Text 6. gnd 7. p4 *exposed pad: gnd 8. gnd 9. p2 10. gnd 11. gnd 12. vdd 13. ctl1 14. ctl2 dpdt switch gaas mmic ! general de...9ghz, p in =30dbm " high isolation 32db typ. @f=0.9ghz, p in =30dbm " high power handling p -0...
Description DPDT SWITCH GaAs MMIC

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    New Japan Radio Co., Ltd.
Part No. NJG1556KB2
OCR Text ...rf = 1489m hz , p lo =-1 5 dbm 6.5db typ. @f rf =1960mhz, p lo =-10dbm l ultra small & ultra thin package flp6-b2 (mount size: 2.0mm x 2.1...9ghz band) general conditions: t a =25 c, v mix =2.7v , v lo =2.7v , f rf = 1960 mhz , f lo = 20...
Description 1.5GHz/1.9GHz Mixer GaAs MMIC(用于1.5GHz/1.9GHz频带数字移动电话的砷化镓单片微波集成电路混频

File Size 332.43K  /  17 Page

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    http://
New Japan Radio Co., Ltd.
Part No. NJG1107KB2-L3 NJG1107KB2-C1 NJG1107KB2-L1 NJG1107KB2-C2 NJG1107KB2-C3 NJG1107KB2-L4 NJG1107KB2-R1 NJG1107KB2-L2
OCR Text ...fout 2.gnd 3.extcap 4.gnd 5.gnd 6.rfin a mp 1 2 3 6 5 4 orientation mark kb2 type (top view) njg1107kb2 - 2 - n absolute maximum ratings...9ghz band) ( v dd =2.7v, f=1.96ghz, t a = + 25 c , z s =z l =50 w , test circuit1 ) parameter symbo...
Description 1.5/1.9GHz LNA GaAs MMIC

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