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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
MCK100-6
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| OCR Text |
... v . a j u n .20 11 mc k 10 0 - 6 s s s s e e e e n n n n si si si si t t t t ive ive ive ive g g g g a a a a t t t t e e e e s s s s ilic i...8 a i t ( a v ) a verag e on- st a t e curren t (80 o condu ct i o n ang l e s ) t i = 85 0 . 5 a i... |
| Description |
Silicon Controlled Rectifiers
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| File Size |
271.54K /
5 Page |
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Panasonic / NAiS
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| Part No. |
SP2-6
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| OCR Text |
6 1.008 36.8 1.449
2C 4C
* High Vibration/Shock Resistance Vibration resistance: 18 G, amplitude 3 mm (10 to 55 Hz) Shock resistance: 40 G (11 ms) * Latching types available * High Sensitivity in Small Size 150 mW pick-up, 300 mW nomi... |
| Description |
Electromechanical Relay, 15A (2C), 10A (4C) COMPACT POWER RELAYS WITH HIGH SENSITIVITY
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| File Size |
127.72K /
6 Page |
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it Online |
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Renesas Technology / Hitachi Semiconductor
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| Part No. |
HM5112805LTD-6
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| OCR Text |
...(HM5113805 Series) Standby : 3.6 mW (max) (CMOS interface) : 1.8 mW (max) (CMOS interface) (L-version) * EDO page mode capability * Refresh cycles #$-only refresh 8192 cycles/64 ms (HM5112805 Series) 4096 cycles/64 ms (HM5113805 Series) ... |
| Description |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
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| File Size |
365.53K /
34 Page |
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it Online |
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Mitsubishi Electric Corporation
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| Part No. |
MH8S72BCFD-6
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| OCR Text |
6 mitsubishi lsis 9 /may. /1999 mit-ds-0312-0.0 description application main memory or graphic memory in computer systems preliminar...8 synchronous drams in tsop. the tsop on a card edge dual in-line package provides any applicati... |
| Description |
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
1,104.80K /
56 Page |
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it Online |
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Mitsubishi Electric Corporation
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| Part No. |
MH8S72DCFD-6
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| OCR Text |
6 30 /sep. /1999 mit-ds-0350-0.0 preliminary spec. some contents are subject to change without notice. mitsubishi lsis mitsubishi electric ...8 synchronous drams in tsop. the tsop on a card edge dual in-line package provides any applicati... |
| Description |
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
990.69K /
56 Page |
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it Online |
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DnI
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| Part No. |
MCR100-6
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| OCR Text |
6
Sensitive Gate Silicon Controlled Rectifiers
Features
2.Gate
Symbol
3. Anode
BVDRM = 400V IT(RMS) = 0.8 A ITSM = 10 A
Repetitive Peak Off-State Voltage : 400V R.M.S On-State Current ( IT(RMS)= 0.8 A ) Low On-State Voltage (1.... |
| Description |
Standard Gate SCR
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| File Size |
556.15K /
5 Page |
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it Online |
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Price and Availability
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