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Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH4M36CJD-6 MH4M36CJD-7 MH4M36CJD-5 MH4M36CJD
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| OCR Text |
6,-7
FAST PAGE MODE ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM
DESCRIPTION
The MH4M36CJD is an 4M word by 36-bit dynamic RAM module and con...15 20
25 30 35
13 15 20
90 110 130
7240 5920 5200
Utilizes industry standard 4M X 4 D... |
| Description |
FAST PAGE MODE ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM 快速页面模式（4194304 - Word6位）动态随机存储器
From old datasheet system
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| File Size |
130.45K /
14 Page |
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Hynix Semiconductor
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| Part No. |
GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17403C-6 GM71S17403CL-5 GM71S17403CL-7 GM71C17403C-5 GM71C17403CL-6 GM71S17403C-5 GM71S17403CL-6 GM71C17403C GM71C17403CL-5 GM71S17403C-7 GM71C17403CLJ-5 GM71C17403CLJ-7 GM71C17403CJ-5 GM71C17403CJ-7 GM71C17403CJ-6 GM71CS17403CJ-5 GM71CS17403CJ-6 GM71CS17403CJ-7
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| OCR Text |
...S)17403C/CL-5 GM71C(S)17403C/CL-6 GM71C(S)17403C/CL-7 50 60 70 13 15 18
tRC
84 104 124
tHPC
20 25 30
Pin Configuration 24(26) SOJ
VCC I/O1 I/O2 WE RAS NC A10 A0 A1 A2 A3 VCC
1 2 3 4 5 6 26 25 24 23 22 21
* Low Power Active :... |
| Description |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns
4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
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| File Size |
96.47K /
10 Page |
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it Online |
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Hanbit Electronics Co., Ltd.
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| Part No. |
HMD2564Z1-6
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| OCR Text |
...e (+5v ), access time ( - 5, - 6), power consumption(normal or low power), and package type ( zip) are optional features of this modul...15 v cc 16 a4 17 a5 18 a6 19 a7 20 a8 speed t rac t cac t rc t pc ... |
| Description |
1Mbit(256x4bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design 1Mbit56x4bit）快速页面模式，000刷新0针邮编，5V的设
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| File Size |
184.68K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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