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50ns. Datasheet PDF File

For 50ns. Found Datasheets File :: 4322 Search Time::0.891ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM29U128IT KM29U128T
OCR Text	...0s(Max.) - Serial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(typ.) - Block Erase time : 2ms(typ.) * Command/Address/Data Multiplexed I/O port * Hardware Data Protection - Program/Erase Lockout During Power Transi...
Description	16M x 8 Bit NAND Flash Memory
File Size	479.05K / 26 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	KAB04D100M-TNGP KAB01D100M KAB01D100M-TLGP KAB01D100M-TNGP KAB02D100M-TLGP KAB02D100M-TNGP KAB03D100M-TLGP KAB03D100M-TNGP KAB04D100M-TLGP
OCR Text	... cycle time(tWC)(59page) * from 50ns to min. 45ns Combined ALE to RE Delay in ID read and in Read cycle(59page) * from min. 20ns and 50ns to min. 10ns Revised RE Access Time(tREA)(59page) * from max. 35ns to max. 30ns Excluded min. value of...
Description	Multi-Chip Package MEMORY
File Size	1,371.88K / 72 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	KBE00F005A-D411 KBE00F005A
OCR Text	...5s(Max.) - Serial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transi...
Description	512Mb NAND2 256Mb Mobile SDRAM2
File Size	1,346.36K / 87 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	KBE00G003M-D411 KBE00G003M
OCR Text	...5s(Max.) - Serial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transi...
Description	NAND 512Mb2 Mobile SDRAM 256Mb2
File Size	1,236.80K / 89 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	KBE00S009M-D411 KBE00S009M
OCR Text	...5s(Max.) - Serial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transi...
Description	From old datasheet system 1Gb NAND x 2 256Mb Mobile SDRAM x 2
File Size	1,891.88K / 86 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	M366S1724CT0-C1L M366S1724CT0-C1H
OCR Text	...echarge 10ns 6ns 20ns 20ns 20ns 50ns 12ns 7ns 20ns 20ns 20ns 50ns A0h 60h 00h 00h 14h 14h 14h 32h 22 23 24 25 26 27 28 29 30 31 32 33 34 SDRAM device attributes : General SDRAM cycle time @CAS latency of 2 SDRAM access time from clock...
Description	PC100 Unbuffered DIMM(168pin) SPD Specification(128Mb C-die base)
File Size	54.11K / 7 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	M366S3323CT0-C1L M366S3323CT0 M366S3323CT0-C1H
OCR Text	...echarge 10ns 6ns 20ns 20ns 20ns 50ns 12ns 7ns 20ns 20ns 20ns 50ns A0h 60h 00h 00h 14h 14h 14h 32h 22 23 24 25 26 27 28 29 30 31 32 33 34 SDRAM device attributes : General SDRAM cycle time @CAS latency of 2 SDRAM access time from clock...
Description	PC100 Unbuffered DIMM 32MB x 64 SDRAM DIMM based on 16MB x 8, 4Banks, 4KB Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
File Size	54.11K / 7 Page	View it Online	Download Datasheet

				http:// Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M5M5V216AWG M5M5V216AWG-70LW M5M5V216AWG-55H M5M5V216AWG-55HI M5M5V216AWG-55HW M5M5V216AWG-55L M5M5V216AWG-55LI M5M5V216AWG-55LW M5M5V216AWG-70H M5M5V216AWG-70HI M5M5V216AWG-70HW M5M5V216AWG-70L M5M5V216AWG-70LI D98014_A
OCR Text	...C ----- max. 55ns(@ 2.7V) / 50ns(@3.3V) 70ns(@ 2.7V) / 65ns(@3.3V) 55ns(@ 2.7V) / 50ns(@3.3V) 70ns(@ 2.7V) / 65ns(@3.3V) 55ns(@ 2.7V) / 50ns(@3.3V) Active current Icc1 (3.0V, typ.) Standard 0 ~ +70 C M5M5V216AWG -70L M5M5V216AW...
Description	2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM 2097152位（131072字由16位）的CMOS静态RAM From old datasheet system
File Size	132.97K / 7 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	GM71VS65163CL
OCR Text	... mode capability Access time : 50ns/60ns (max) Refresh cycles - RAS only Refresh 4096 cycles/64 ms (GM71V65163C) 4096 cycles/128ms (GM71VS65163CL)(L_Version) *CBR & Hidden Refresh 4096 cycles/64 ms (GM71V65163C) 4096 cycles/128 ms (GM71VS...
Description	(GM71VS65163CL / GM71V65163C) 4M x 16-Bit MOS DRAM
File Size	133.33K / 10 Page	View it Online	Download Datasheet

				International Business Machines, Corp.
Part No.	IBM0116400M
OCR Text	...tes ibm0116400j3 -50 sp no 5.0v 50ns 400mil soj 28/24 1 ibm0116400j3 -60 sp no 5.0v 60ns 400mil soj 28/24 1 ibm0116400j1 -50 sp no 5.0v 50ns 300mil soj 26/24 1 ibm0116400j1 -60 sp no 5.0v 60ns 300mil soj 26/24 1 ibm0116400t1 -50 sp no 5.0v ...
Description	4M x 4 12/10 DRAM(16M动态RAM（带22条地址线，其中12条为行地址选通，10条为列地址选通）) 4米4 120日的DRAM,600位动态随机存储器（带22条地址线，其中12条为行地址选通，10条为列地址选通）
File Size	327.92K / 28 Page	View it Online	Download Datasheet

For 50ns. Found Datasheets File :: 4322 Search Time::0.891ms
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