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Kersemi Electronic Co., Ltd.
Kersemi Electronic Co.,...
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| Part No. |
IRFZ34 IRFZ34PBF
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| OCR Text |
...erse recovery charge q rr -0.71.4nc forward turn-on time t on intrinsic turn-on time is neglig ible (turn-on is dominated by l s and l d ) d s g s d g www.kersemi.com
3 irfz34, sihfz34 fig. 1 - typical output characteristics, t c = 25... |
| Description |
Power MOSFET
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| File Size |
3,990.57K /
7 Page |
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TY Semiconductor Co., Ltd
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| Part No. |
KTD2017
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| OCR Text |
...g 42 nc gate-source charge q gs 4nc gate-drain charge q gd 8nc diode forward voltage v sd i f =5a,v gs =0v 0.8 1.2 v static drain to source on-state resistance see specified test circuit v ds =10v,v gs =10v,i d =5a ktd2017 4008-318-123 sale... |
| Description |
Low ON resistance 2.5V drive Mounting height 1.1mm Composite type, facilitating high-density mounting.
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| File Size |
98.16K /
2 Page |
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TY Semiconductor Co., Ltd
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| Part No. |
KI4980DY
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| OCR Text |
...5 30 nc gate-source charge q gs 4nc gate-drain charge q gd 3.2 nc gate resistance r g 5.1 turn-on delay time t d(on) 10 20 ns rise time t r v dd =40v,r l =40 10 20 ns turn-off delay time t d(off) i d =1a,v gen =10v,r g =6 30 60 ns fall time... |
| Description |
Drain-Source Voltage Vds 80V Gate-Source Voltage Vgs -20V
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| File Size |
165.21K /
2 Page |
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| Part No. |
IRF6702M2DTRPBF
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| OCR Text |
...2 q rr q oss v gs(th) 9.4nc 3.3nc 1.2nc 17nc 6.3nc 1.8v v dss v gs r ds(on) r ds(on) 30v max 20v max 5.2m ? @ 10v 8.6m ? @ 4.5v 0 5 10 15 20 25 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t... |
| Description |
15 A, 30 V, 0.0066 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
267.38K /
10 Page |
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