| |
|
 |
PANASONIC[Panasonic Semiconductor]
|
| Part No. |
2SK3046
|
| OCR Text |
...*
TC = 25C Ta = 25C
L = 5.4mh, IL = 7A, 1 pulse
s Electrical Characteristics (TC = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Sou... |
| Description |
Silicon N-Channel Power F-MOS FET
|
| File Size |
44.25K /
3 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
IRF[International Rectifier]
|
| Part No. |
61CTQ045PBF
|
| OCR Text |
...
TJ = 25C, IAS = 4Amps, L = 3.4mh Current decaying linearty to zero in 1 sec Frequency limited by T J max. V A = 1.5 x VR typical
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop (1) IRM CT LS
Typ. Max. Units Con... |
| Description |
SCHOTTKY RECTIFIER
|
| File Size |
130.18K /
6 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
IRF[International Rectifier]
|
| Part No. |
61CTQ045
|
| OCR Text |
...
TJ = 25C, IAS = 4Amps, L = 3.4mh Current decaying linearty to zero in 1 sec Frequency limited by T J max. VA = 1.5 x VR typical
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop (1) IRM CT LS Max. Instantaneus Rever... |
| Description |
45V 60A Schottky Discrete Diode in a TO-220AB package SCHOTTKY RECTIFIER
|
| File Size |
87.83K /
6 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FDAF62N28
|
| OCR Text |
...m junction temperature 2. L = 2.4mh, IAS = 36A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 36A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Tempera... |
| Description |
280V N-Channel MOSFET
|
| File Size |
718.08K /
8 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|