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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q68000-A8883 CGY181
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| OCR Text |
...typ 1.2 2 400 10 20.5 15.5 18.5 31.5 34.5 37 35 -44.8 -70 -45.1 -75 1.9:1 41 44
max 3 -
Unit A mA A A dB dB dB dBm dBm % % dBc dBc
...5dBm Power Gain
VD=3.6V, Pin = 16 dBm
Power Gain
VD=5V, Pin = 16 dBm
Output Power
VD=3.6V, ... |
| Description |
GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier) From old datasheet system
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| File Size |
138.12K /
14 Page |
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it Online |
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Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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| Part No. |
MGFC45V3642A C453642A
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| OCR Text |
...29 INPUT POWER Pin (dBm S.C.L.) 31 IM3
VDS=10V IDS=8A f1=4.20GHz f2=4.21GHz 2-tone test
10 0 Po -10 -20 -30 -40 -50 -60
OUTPUT POWER Po (dBm S.C.L.)
S parameters
f (GHz) 3.50 3.60 3.70 3.80 3.90 4.00 4.10 4.20 4.30 Magn. 0.51 0.5... |
| Description |
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET 3.6 - 4.2GHz波段32W内部匹配砷化镓场效应 From old datasheet system
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| File Size |
172.84K /
2 Page |
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it Online |
Download Datasheet
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