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  30v- Datasheet PDF File

For 30v- Found Datasheets File :: 34092    Search Time::1.796ms    
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    VUS11

ETC
Part No. VUS11
OCR Text ...v. 1 npn open collector output: 30v 80ma max. residual voltage 0.8v max. n.o. (red led lights up when set pressure exceeded) fixed (2%f.s. max.) 3%f.s. max. (at ta=25c/77f) approx. 1msec 0 ~ 150psi (0 ~ 1mpa) 218psi (1.5mpa) 0 ~ -30in. hg (...
Description Pressure Sensor

File Size 216.47K  /  3 Page

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    2SJ400

SANYO[Sanyo Semicon Device]
Part No. 2SJ400
OCR Text ...-1mA, VGS=0 IG=100A, VDS=0 VDS=-30V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-18A ID=-18A, VGS=-10V ID=-18A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit See specified Test Circuit See sp...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 41.78K  /  4 Page

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    TSM35N03PQ56

Taiwan Semiconductor Company, Ltd
Part No. TSM35N03PQ56
OCR Text 30v n-channel power mosfet 1/4 version: a12 pdfn 5x6 product summar...
Description 30V N-Channel Power MOSFET

File Size 83.80K  /  4 Page

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    MINGDA MICROTRONICS
Part No. MD7133H MD7136H MD71XXH
OCR Text ...oltage capacity it can be up to 30v, suitable for applications which requires higher voltage circuit. ferture(typical) high output voltage accuracy 3 low dropout voltage 40mv low quie...
Description (MD71XXH Series) High Input(30V) CMOS Voltage Regulator

File Size 140.03K  /  10 Page

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    ZXMC3AMC ZXMC3AMCTA

Diodes Incorporated
Part No. ZXMC3AMC ZXMC3AMCTA
OCR Text ...f diodes incorporated 30v complementary pair enhancement mode mosfet product summary device v (br)dss r ds(on) max i d max t a = 25c (notes 4 & 7) q1 30v 120m @ v gs = 10v 3.7a 180m @ v gs = 4.5v 3....
Description 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

File Size 727.69K  /  11 Page

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    ZXMC3AM832

Zetex Semiconductors
Part No. ZXMC3AM832
OCR Text 30v; r ds(on) = 0.12 ;i d = 3.7a p-channel v (br)dss = -30v; r ds(on) = 0.21 ;i d = -2.7a description packaged in the new innovative 3mm x 2mm mlp(micro leaded package) outline this dual 30v n channel trench mosfet utilizes a unique structu...
Description N & P-channel MOSFET

File Size 309.20K  /  10 Page

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    TSM190N08 TSM190N08CZC0

Taiwan Semiconductor Company, Ltd
Part No. TSM190N08 TSM190N08CZC0
OCR Text ...mic total gate charge v ds = 30v, i d = 90a, v gs = 10v q g -- 160 -- nc gate-source charge q gs -- 35 -- gate-drain charge q gd -- 40 -- input capacitance v ds = 30v, v gs = 0v, f = 1.0mhz c iss -- 860...
Description 75V N-Channel Power MOSFET

File Size 57.13K  /  4 Page

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    2SJ466

SANYO[Sanyo Semicon Device]
Part No. 2SJ466
OCR Text ...-1mA, VGS=0 IG=100A, VDS=0 VDS=-30V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-18A ID=-18A, VGS=-10V ID=-18A, VGS=-4V -1.0 16 27 20 30 30 40 Conditions Ratings min -30 20 -100 10 -2.0 typ max Unit V V A A V S m m Continued on ...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 38.71K  /  4 Page

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    TSM160N10

Taiwan Semiconductor Company, Ltd
Part No. TSM160N10
OCR Text ...mic total gate charge v ds = 30v, i d = 30a, v gs = 10v q g -- 154 -- nc gate-source charge q gs -- 35 -- gate-drain charge q gd -- 40 -- input capacitance v ds = 30v, v gs = 0v, f = 1.0mhz c iss -- 984...
Description 100V N-Channel Power MOSFET

File Size 476.14K  /  6 Page

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    PMN35EN

NXP Semiconductors
Part No. PMN35EN
OCR Text ...drain-source voltage t j =25c --30v v gs gate-source voltage -20 - 20 v i d drain current v gs =10v; t amb =25c [1] --5.1a static characteristics r dson drain-source on-state resistance v gs =10v; i d =5.1a; t j = 25 c - 25 31 m ? table 2....
Description 30 V, 5.1 A N-channel Trench MOSFET

File Size 801.36K  /  15 Page

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