| |
|
 |
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
FX6KMJ-3
|
| OCR Text |
...ISHI Pch POWER MOSFET
FX6KMJ-3
HIGH-SPEED SWITCHING USE
FX6KMJ-3
OUTLINE DRAWING
10 0.3
6.5 0.3 3 0.3
Dimensions in mm
...12A
0.4
-4
-6A -3A
0.2 0 -10-1 -2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 DRAIN CURREN... |
| Description |
HIGH-SPEED SWITCHING USE
|
| File Size |
49.43K /
4 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
IRF[International Rectifier]
|
| Part No. |
JANTXV2N6770 JANTX2N6770
|
| OCR Text |
...
12 7.75 48 150 1.2 20 8 12 -- 3.5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10.5 seconds) 11.5 (typical)
A
W W/K V mJ A mJ V/ns...12A VDS = VGS, ID = 250A VDS > 15V, IDS = 7.75A VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rat... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=500v, Rds(on)=0.40ohm, Id=12A)
|
| File Size |
195.54K /
6 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
International Rectifier, Corp. IRF[International Rectifier]
|
| Part No. |
IRFN450
|
| OCR Text |
...8.0 48 150 1.2 20 750 12.0 15.0 3.5 -55 to 150 300 (for 5 seconds) 2.6 (typical)
Units A
W W/K V mJ A mJ V/ns
oC
g
To Order
P...12A VDS = VGS, ID = 250A VDS > 15V, IDS = 8A VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.415ohm, Id=12A) 功率MOSFET N沟道BVdss \u003d 500V及的Rds(on)\u003d 0.415ohm,身份证\u003d 12A条)
|
| File Size |
175.61K /
6 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
KEC[KEC(Korea Electronics)]
|
| Part No. |
KMB014P30QA
|
| OCR Text |
...T
MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05
FLP-8
...12A Qg* VDS=-15V, VGS=-4.5V, ID=-12A Qgs* VDS=-15V, VGS=-10V, ID=-12A Qgd* td(on)* tr* td(off)* tr* ... |
| Description |
P-Ch Trench MOSFET
|
| File Size |
460.95K /
4 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|