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Diodes
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| Part No. |
DMMT3906
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| OCR Text |
...porated maximum ratings @ t a = 25 c unless otherwise specified a m j l f d b c h k c 1 c 2 e 1 nc e 2 b 1,2 mechanical data case: sot-2...50ma, v ce = -1.0v i c = -100ma, v ce = -1.0v collector-emitter saturation voltage v ce(sat) ... |
| Description |
Bipolar Transistors
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| File Size |
59.61K /
3 Page |
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it Online |
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Electronic Theatre Controls, Inc.
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| Part No. |
ELM9815BA ELM9815AA ELM9817AA ELM9851BA ELM9816BA
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| OCR Text |
...9827xa elm9827xa elm9827xa (top=25 ) parameter symbol conditions min. typ. max. units output voltage vout vin=4.7v, iout=1ma 2.646 2.700 2...50ma input/output voltage differential vdif iout=10ma 90 120 mv current consumption iss vin=4.7v, ... |
| Description |
VOLTAGE REGULATOR 电压调节
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| File Size |
202.86K /
13 Page |
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it Online |
Download Datasheet |
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FORMOSA[Formosa MS]
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| Part No. |
FMBT3906
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| OCR Text |
25 Page No. : 1/3
FMBT3906
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The FMBT3906 is designed for general purpose switching and am...50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-1... |
| Description |
PNP EPITAXIAL PLANAR TRANSISTOR
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| File Size |
36.29K /
3 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FMBS5401
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| OCR Text |
...
125 C
o
100
0.2
o
25 C 125 C
o
25 C
o
0.1
50
- 40 C
o
- 40 C
1 10 100
o
0 1E-4
1E-3
0.01
0.1
1
0.0 0.1
IC - COLLECTOR CURRENT (A)
IC - COLLECTOR CURRENT (mA)
Figure 1. T... |
| Description |
PNP General Purpose Amplifier
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| File Size |
93.44K /
6 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FMBM5401 FMBM5401SB74001
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| OCR Text |
...
125 C
o
100
0.2
o
25 C 125 C
o
25 C
o
50
- 40 C
o
0.1
- 40 C
1 10 100
o
0 1E-4
1E-3
0.01
0.1
1
0.0 0.1
IC - COLLECTOR CURRENT (A)
IC - COLLECTOR CURRENT (mA)
Figure 3. Bas... |
| Description |
NPN General Purpose Amplifier
PNP General Purpose Amplifier
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| File Size |
91.31K /
6 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
MA4VAT2004-1061T
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| OCR Text |
...olute Maximum Ratings1,2 @ T = +25 C
Parameter
Operating Temperature Storage Temperature Junction Temperature RF C.W. Incident Power Rever...50mA per Diode
1. All the above are at Room Temperature except as noted 2. Exceeding the above Li... |
| Description |
High IIP3 PIN Diode Variable Attenuator 1.70-2.00 GHz
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| File Size |
395.95K /
4 Page |
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it Online |
Download Datasheet |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
HC1062A
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| OCR Text |
...ss otherwise specified, t amb = 25 parameter symbol conditions value unit continuous line voltage v ln 12 v repetitive line volta...50ma + 0.2 db transmitting gain variation a v adjust r7 between pin 2 and 3 -8 0 v i ... |
| Description |
Low Voltage Telephone Speech Transmission Circuit / High/Low Level Mute 低压输电线路电话语音/低级别静
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| File Size |
87.32K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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