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  240 480v-120v Datasheet PDF File

For 240 480v-120v Found Datasheets File :: 317    Search Time::1.375ms    
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    H&M Semiconductor
Part No. HM20N60A
OCR Text ...,watts 120 0 0 40 80 25 200 160 240 280 100 75 125 150 characteristics curve 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectan...480v hm20n60a 6 shenzhen h&m semiconductor co.ltd http //www.hm...
Description silicon N-channel Enhanced VDMOSFET

File Size 521.58K  /  10 Page

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    Wisdom technologies Int...
Part No. WFP12N60
OCR Text ...s tr turn-on rise time -- 115 240 ns td(off) turn-off delay time -- 95 200 ns tf turn-off fall time -- 85 180 ns qg total gate ch...480v note : i d = 12a v gs , gate-source voltage [v] q g , total gate charge [nc] 0 5 10 15 2...
Description 600V N-Channel MOSFET

File Size 1,440.07K  /  6 Page

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    HFP10N60

SemiHow Co.,Ltd.
Part No. HFP10N60
OCR Text ...7 75 120 80 44 9.7 20 55 150 240 160 57 --- nC nC nC VDS = 480V, ID = 9.5 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pul...
Description 600V N-Channel MOSFET

File Size 645.33K  /  8 Page

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    APT6015JVFR APT6015JFVR

Advanced Power Technology
Part No. APT6015JVFR APT6015JFVR
OCR Text ...OP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (...
Description POWER MOS V FREDFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.28K  /  4 Page

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    Wisdom technologies Int...
Part No. WFP4N60-10
OCR Text ...sed avanche energy ( note1) 240 mj i ar avalanche current (note2) 4 a p d power dissipation (tc=25 ) 100 w ...480v, tc=125 100 a igssf gate-body leakage current, forward vgs=+30v, vds=0v -- -- 100...
Description 600V N-Channel MOSFET

File Size 1,419.73K  /  6 Page

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    Cystech Electonics Corp...
Part No. MTN4N60CFP MTN4N60CFP-0-UB-S
OCR Text ...econds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max...
Description N-Channel Enhancement Mode Power MOSFET

File Size 472.31K  /  10 Page

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    Wisdom technologies Int...
Part No. WFP5N60
OCR Text ...sed avanche energy ( note1) 240 mj i ar avalanche current (note2) 4 a p d power dissipation (tc=25 ) 100 w t j...480v, tc=125 100 a igssf gate-body leakage current, forward vgs=+30v, vds=0v -- -- 100...
Description 600V N-Channel MOSFET

File Size 1,430.01K  /  6 Page

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    APT60M75JVFR

Advanced Power Technology
Part No. APT60M75JVFR
OCR Text ...OP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (...
Description POWER MOS V FREDFET

File Size 189.66K  /  4 Page

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    2SK3928-01

FUJI[Fuji Electric]
Part No. 2SK3928-01
OCR Text ...D=f(Tc) FUJI POWER MOSFET 240 24 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C 20V 10V 7.5V 200 20 ...480V VGS [V] 75 100 125 150 4 12 3 min. 8 2 1 4 0 -50 -25 0 25 50 0 0...
Description N-CHANNEL SILICON POWER MOSFET

File Size 110.75K  /  4 Page

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    2SK3451-01

FUJI[Fuji Electric]
Part No. 2SK3451-01
OCR Text ... 10 0.50 5.5 11 1600 2400 160 240 7 10.5 18 27 16 24 35 50 8 15 34 51 12.5 19 11.5 17.5 13 1.00 1.50 0.75 6.5 ns nC A V s C Th...480V Vcc= 120V 1n 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss VGS [V] C [F] 1...
Description High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

File Size 104.84K  /  4 Page

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For 240 480v-120v Found Datasheets File :: 317    Search Time::1.375ms    
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