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  20v 0.25a Datasheet PDF File

For 20v 0.25a Found Datasheets File :: 2711    Search Time::2.281ms    
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    FDMS8460

Fairchild Semiconductor
Part No. FDMS8460
OCR Text ... 25C VGS = 0V, VDS = 32V, VGS = 20v, VDS = 0V 40 32 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source T...0 1.9 -7.5 2.0 2.6 2.6 137 2.2 3.0 3.3 S m 3.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg ...
Description N-Channel Power Trench? MOSFET 40V, 49A, 2.2mΩ
N-Channel Power Trench㈢ MOSFET 40V, 49A, 2.2mヘ

File Size 269.13K  /  7 Page

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    PSMN4R3-100ES PSMN4R3-100ES-15

NXP Semiconductors
Part No. PSMN4R3-100ES PSMN4R3-100ES-15
OCR Text ...gss gate leakage current v gs =-20v; v ds =0v; t j = 25 c - 10 100 na v gs =20v; v ds =0v; t j = 25 c - 10 100 na r dson drain-source on-sta...0.9 - ? dynamic characteristics q g(tot) total gate charge i d =75a; v ds =50v; v gs =10v; see fig...
Description N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK

File Size 198.63K  /  14 Page

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    Infineon Technologies
Part No. K10T60
OCR Text ...urrent i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =10a - 6 - s integrated gate resistor r gint ...0.197 in.) from case l e - 7 - nh short circuit collector current 1) i c(sc) v ge =15v, t...
Description IGBT

File Size 794.51K  /  13 Page

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    STD434S STU434S

SamHop Microelectronics Corp.
Part No. STD434S STU434S
OCR Text ... VDS=32V , VGS=0V 40 VGS= 20v , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistan...0.84 1.3 A V VGS=0V,IS=10A Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse T...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 232.91K  /  8 Page

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    Infineon
Part No. K15N60
OCR Text ...urrent i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =15a 3 10.9 - s dynamic characteristic input...0.197 in.) from case l e pg-to-220-3-1 pg-to-247-3-21 - - 7 13 - - nh short circuit col...
Description Search --To SKP15N60

File Size 901.34K  /  14 Page

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    IRLR8726PBF IRLR8726TRPBF IRLU8726PBF

International Rectifier
Part No. IRLR8726PBF IRLR8726TRPBF IRLU8726PBF
OCR Text ... 24V, VGS = 0V, TJ = 125C VGS = 20v VGS = -20v VDS = 15V, ID = 20A See Fig. 15 VDS = 15V, VGS = 0V VDD = 15V, VGS = 4.5Ve ID = 20A RG = 1...0 36 78 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 2...
Description HEXFET Power MOSFET

File Size 334.79K  /  11 Page

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    IGB10N60T

Infineon Technologies AG
Part No. IGB10N60T
OCR Text ... C E = 0V ,V G E = 2 0V V C E = 20v, I C = 10A 6 none 40 1000 100 nA S 4.1 1.5 1.8 4.6 2.05 5.7 A 600 V Symbol Conditions Value min. typ. m...0/ 1 5V , R G = 2 3 , L 2 ) = 6 0nH , C 2 ) =40pF Energy losses include "tail" and diode reverse r...
Description Low Loss IGBT in TrenchStop and Fieldstop technology

File Size 775.89K  /  12 Page

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