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  200-ft. Datasheet PDF File

For 200-ft. Found Datasheets File :: 21341    Search Time::2.266ms    
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    2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB

NEC[NEC]
NEC Corp.
Part No. 2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text ...TO EMITTER VOLTAGE VCE = 6 V 200 40 30 20 10 100 0 50 100 TA - Ambient Temperature - C 150 0 0.5 VBE - Base to Emitt...fT - Gain Bandwidth Product - GHz |S21e|2 - Insertion Power Gain - dB INSERTION POWER GAIN vs. CO...
Description L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 51.33K  /  8 Page

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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text ... IC - Collector Current - mA 200 40 30 100 60 mW 20 10 0 50 100 TA - Ambient Temperature - C COLLECTOR CURRENT vs. COLL...fT - Gain Bandwidth Product - GHz 12 10 8 6 4 2 0 1 VCE = 3 V f = 2 GHZ 12 10 8 6 4 2 0 ...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 48.18K  /  8 Page

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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ... - Total Power Dissipation - mW 200 IC - Collector Current - mA 40 30 20 10 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 3 V 100 ...fT - Gain Bandwidth Product - GHz 12 10 8 6 4 2 0 1 2 5 10 20 50 | S21a |2 - Insertion Power Gain - ...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.94K  /  8 Page

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    C5191

NEC
Part No. C5191
OCR Text ... IC PT Tj Tstg RATING 9 6 2 100 200 150 -65 to +150 UNIT V V V mA mW C C This device uses radio frequency technology. Take due precaution...fT fT Cre 2 CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 3 mA Note 1 MIN. ...
Description Search --To 2SC5191

File Size 91.02K  /  12 Page

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    Panasonic
Part No. 2SC3938
OCR Text ...mA VCB = 10 V, IE = -10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Refer to the measurement circuit 450 2 17 17 10 6 60 0.17 Min Typ Max ...fT I E VCE = 10 V Ta = 25C Cob VCB Collector output capacitance C (pF) (Common base, input op...
Description Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.

File Size 82.67K  /  4 Page

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    Matsshita / Panasonic
Part No. 2SC3938 0623
OCR Text ...0 6 60 0.17 min typ max 0.1 0.1 200 0.25 1.0 V V MHz pF ns ns ns Unit A A FE Rank classification Rank hFE Marking Symbol Q 60 ~ 120 2...fT -- I E 6 Cob -- VCB Collector output capacitance Cob (pF) VCE=10V Ta=25C IE=0 f=1MHz Ta=25C...
Description Transistor
From old datasheet system

File Size 50.95K  /  3 Page

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    Panasonic
Part No. 2SB0621 2SB0621A 2SB621A
OCR Text ...mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz 85 50 - 0.2 - 0.85 200 20 30 - 0.4 -1.2 VCEO IC = -2 mA, IB = 0 Symbo...fT I E Collector output capacitance C (pF) (Common base, input open circuited) ob 200 VCB = -10 V...
Description Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

File Size 89.55K  /  4 Page

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    Panasonic
Part No. 2SB0642 2SB642
OCR Text ...Tstg Rating -60 -50 -7 -100 -200 400 150 -55 to +150 Unit V V V mA mA mW C C 3 1.00.1 Absolute Maximum Ratings Ta = 25C (0....fT Cob Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 IE = -10 A, IC = 0 VCB = -20 V, IE = 0 VCE =...
Description Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

File Size 96.96K  /  4 Page

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    Panasonic
Part No. 2SB0643 2SB0644 2SB643
OCR Text ...mA VCB = -10 V, IE = 10 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz Min -30 -60 -25 -50 -7 Typ Max Unit V V Emitter-bas...fT Cob Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring ...
Description Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires 小信号装小信号晶体管-一般使用低Amplifires

File Size 78.86K  /  3 Page

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    2SB0709A 2SB709A

Panasonic Semiconductor
Part No. 2SB0709A 2SB709A
OCR Text ...Tj Tstg Rating -45 -45 -7 -100 -200 200 150 -55 to +150 Unit V V V mA mA mW C C 1.1+0.2 -0.1 1.1+0.3 -0.1 1: Base 2: Emitter 3: Col...fT Cob Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 IE = -10 A, IC = 0 VCB = -20 V, IE = 0 VCE =...
Description    Silicon PNP epitaxial planar type
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires 小信号装小信号晶体管-一般使用低Amplifires

File Size 94.25K  /  4 Page

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