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HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
IRF234 IRF235 IRF236 IRF237
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| OCR Text |
...
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow prop...5V
IRF234, IRF235
100 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERA... |
| Description |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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| File Size |
68.51K /
7 Page |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
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| OCR Text |
...0A ns --- 21 --- RG = 1.8 --- 9.2 --- VGS = 4.5V --- 2672 --- VGS = 0V --- 1064 --- pF VDS = 16V --- 109 --- = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
---... |
| Description |
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
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| File Size |
120.60K /
11 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
IRF9520 FN2281
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| OCR Text |
..., VGS = 0V TC = 125oC MIN -100 -2 -6 0.9 VGS = -10V, ID = -6A, VDS = 0.8 x Rated BVDSS (Figure 14) Gate Charge is Essentially Independent of...5V VGS = -4V
0
0
-10 -20 -30 -40 VDS, DRAIN TO SOURCE VOLTAGE (V)
-50
FIGURE 4. FORWA... |
| Description |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
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| File Size |
57.36K /
7 Page |
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it Online |
Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
IRF9540 RF1S9540SM FN2282
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| OCR Text |
...nt On-State Drain Current (Note 2) Gate to Source Leakage Current
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) ...5V 0 0 -10 -20 VGS = -7V VGS = -6V -30 VGS = -4V -40 -50
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
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| Description |
19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system
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| File Size |
59.17K /
7 Page |
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it Online |
Download Datasheet |
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