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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S21140HSR3 MRF6S21140HR3
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| OCR Text |
...d W L L applications. * Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 30 Watts Avg., Full Frequency Band, ...C19 C2 Z2 Z3 Z4 DUT C18 C6 C7 Z8 Z9 Z10 Z11 Z12 Z13 RF OUTPUT
C8
Z7
C11
C14
C15
Z1... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
510.34K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6P9220HR3
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| OCR Text |
...it Vdc Vdc W W/C C C W
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 220 W ...C19 C20 + C22 C21 B2 Z7 Z20 C6 Z5 DUT C11 C12 RF Z18 OUTPUT C23 + C15 C16 + C18 C17 VSUPPLY
COAX3... |
| Description |
880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET
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| File Size |
431.30K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6P9220HR3_06 MRF6P9220HR3 MRF6P9220HR306
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| OCR Text |
2, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and indust...C19 C20 + C22 C21 B2 Z7 Z20 C6 Z5 DUT C11 C12 RF Z18 OUTPUT C23 + C15 C16 + C18 C17 VSUPPLY
COAX3... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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| File Size |
494.89K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6P3300HR5 MRF6P3300H MRF6P3300HR3 MRF6P3300HR3_06
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| OCR Text |
... 270 Watts PEP Power Gain -- 20.2 dB Drain Efficiency -- 44.1% IMD -- - 30.8 dBc * Typical Narrowband DVBT OFDM Performance @ 860 MHz: VDD =...C19 C20 + C22 C21 B2 Z5 C13 Z11 COAX4 VSUPPLY C6 Z7 DUT C10 C11 C12 Z6 Z8 C1 C2 C3 Z10 Z12 Z14 Z16 C... |
| Description |
RF Power Field Effect Transistor
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| File Size |
998.42K /
24 Page |
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Freescale Semiconductor, In...
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| Part No. |
MRF5P21180HR6-08
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| OCR Text |
...nd wll app lications. ? typical 2--carrier w--cdma performance: v dd = 28 volts, i dq = 1600 ma, pout = 38 watts avg., channel bandwidth = 3...c19 + c20 c16 + c18 + v supply c7 + c10 c21 + c22 c15 + c17 + c4 z13 z17 z19 c3 z23 z18 z20 z21 z22 ... |
| Description |
RF Power Field Effect Transistor
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| File Size |
406.69K /
10 Page |
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Freescale (Motorola) FREESCALE[Freescale Semiconductor, Inc] 飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6P27160HR6
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| OCR Text |
...formance: VDD = 28 Volts, IDQ = 2 x 900 mA, Pout = 35 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Th...C19 Z31 C13 RF OUTPUT Z32 Z33 DUT VSUPPLY
Z17 Z19 Z21 Z23 Z25 Z27 Z29
Z3 RF INPUT Z1 Z2 C2 C1
... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RF功率场效应晶体管N沟道增强型MOSFET的侧
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| File Size |
440.42K /
12 Page |
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it Online |
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椋???″????浣?涓??)??????
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| Part No. |
MRFE6P3300HR3
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| OCR Text |
...ating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, j...c19 v supply rf output z18 v bias z4 z5 z2 z3 z11 z10 + + + c7 r1 b1 c14 c12 z12 z14 z16 c20 c22 + c... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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| File Size |
419.68K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc] MOTOROLA
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| Part No. |
MRF6P27160H_06 MRF6P27160H MRF6P27160HR6_06 MRF6P27160HR6 MRF6P27160HR606 MRF6P27160H06
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| OCR Text |
...it Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 79C, 160 W ...C19 Z31 C13 RF OUTPUT Z32 Z33 DUT VSUPPLY
Z17 Z19 Z21 Z23 Z25 Z27 Z29
Z3 RF INPUT Z1 Z2 C2 C1
... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 2700 MHz, 35 W AVG., 28 V Single N??DMA Lateral N??hannel RF Power MOSFET
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| File Size |
483.58K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6P24190HR6
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| OCR Text |
...ut = 190 Watts Power Gain -- 13.2 dB Drain Efficiency -- 46.2% * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW Output Powe...C19 C20 C21 C27
VSUPPLY
Z24
Z25
Z26
RF OUTPUT Z27
VSUPPLY
Z1 Z2 Z3 Z4 Z5 Z6, Z7... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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| File Size |
359.17K /
9 Page |
View
it Online |
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