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NXP Semiconductors N.V.
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| Part No. |
BUK6E2R0-30C
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| OCR Text |
...03aae542 0 1 2 3 4 -60 0 60 120 180 t j ( c) v gs(th) (v) max @1ma typ @1ma min @2.5ma 03aa27 0 0.5 1 1.5 2 ? 60 0 60 120 180 t j ( c) a...channel trenchmos intermediate level fet fig 13. gate-source voltage as a function of gate charge; ... |
| Description |
N-channel TrenchMOS intermediate level FET 120 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
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| File Size |
163.72K /
15 Page |
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NXP Semiconductors N.V.
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| Part No. |
BUK6C1R5-40C
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| OCR Text |
...cs q gd gate-drain charge i d = 180 a; v ds =32v; v gs =10v; see figure 13 ; see figure 14 -80-nc table 1. quick reference data ?contin...channel trenchmos intermediate level fet 4. limiting values [1] accumulated pulse duration not to ... |
| Description |
N-channel TrenchMOS intermediate level FET 319 A, 40 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
183.27K /
13 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7272 FN4297
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| OCR Text |
180 Ohm, Rad Hard, N-Channel Power MOSFET
Description
The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, ... |
| Description |
8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFET 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET From old datasheet system
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| File Size |
38.57K /
7 Page |
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it Online |
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Intersil
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| Part No. |
ISL6726
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| OCR Text |
...irectional synchronization with 180 phase shift for interleaving applic ations, adjustable soft-start and soft-stop, a low power disable m...channel active clamp fets ? programmable switch timing between main and active clamp outputs ? prog... |
| Description |
Active Clamp Forward PWM Controller
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| File Size |
832.23K /
20 Page |
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it Online |
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Price and Availability
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