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IXYS[IXYS Corporation]
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| Part No. |
IXFN80N50 IXFN75N50
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| OCR Text |
...0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetit...u.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,... |
| Description |
(IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET
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| File Size |
125.53K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT10035B2FLL APT10035LFLL
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| OCR Text |
...MIN TYP MAX uNIT pF
5300 870 174 203 31 135 15 6 6 31
nC
Gate-Source Charge Turn-on Delay Time Rise Time
Gate-Drain ("Miller ") Ch...u.S.patents: 4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,47... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
54.08K /
2 Page |
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it Online |
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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| Part No. |
SD57060-01 TSD57060-01
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| OCR Text |
...170.23 -170.71 -171.19 -173.39 -174.29 -174.64 -174.9 -175.08 -175.3 -175.5 -175.73 -176.02 -176.29 -176.6 -176.9 -177.22 -177.51 -177.83 -1...u.S.A. http://www.st.com
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| Description |
RF POWER TRANSISTORS The LdmoSTFAMILY
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| File Size |
70.65K /
8 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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| Part No. |
SD57060 TSD57060
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| OCR Text |
...170.23 -170.71 -171.19 -173.39 -174.29 -174.64 -174.9 -175.08 -175.3 -175.5 -175.73 -176.02 -176.29 -176.6 -176.9 -177.22 -177.51 -177.83 -1...u.S.A. http://www.st.com
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| Description |
RF POWER TRANSISTORS The LdmoSTFAMILY
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| File Size |
72.01K /
8 Page |
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it Online |
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Price and Availability
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