15v 3.0a pdf Datasheet P14 Full Text Search --- IC-ON-LINE


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15v 3.0a Datasheet PDF File

For 15v 3.0a Found Datasheets File :: 6855 Search Time::1.719ms
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				ADPOW[Advanced Power Technology]
Part No.	APT5025BN APT5030BN
OCR Text	...DSS ID = ID [Cont.] @ 25C VGS = 15v VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.8 MIN TYP MAX UNIT 2380 522 196 83 12.6 51 14 27 61 36 ...3 320 5.5 640 11 Volts ns C Amps 2 (VGS = 0V, IS = -ID [Cont.]) Reverse Recovery Time (IS ...
Description	POWER MOS IV 500V 23.0a 0.25 Ohm / 500V 21.0A 0.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	51.13K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF120JRD
OCR Text	...ector-Emitter On Voltage (VGE = 15v, I C = 40A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15v, I C = 40A, Tj = 125C) Collector Cut-off C...3 APT50GF120JRD Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15v V...
Description	Fast IGBT & FRED 1200V 75A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
File Size	51.80K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT50GF60B2RD APT50GF60LRD
OCR Text	...ector-Emitter On Voltage (VGE = 15v, I C = I C2, Tj = 25C) Collector-Emitter On Voltage (VGE = 15v, I C = I C2, Tj = 125C) Collector Cut-off...3 APT50GF60B2RD/LRD Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 1...
Description	Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
File Size	112.47K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8030JN APT8035JN
OCR Text	...DSS ID = ID [Cont.] @ 25C VGS = 15v VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT 5780 725 240 245 28 113 14 14 48 12 ...3 5 2500 35 13 pF in-lbs 1 Repetitive Rating: Pulse width limited by maximum junction temperat...
Description	POTENTIOMETER, 1.5W 50K POTENTIOMETER, 1.5W 50K; VARIABLE ROTARY WIREWOUND; RESISTANCE, TRACK:50KR; SERIES:535; POWER RATING:1.5W; CASE STYLE:PANEL MOUNT; DIAMETER, BODY:22.2MM; DIAMETER, SHAFT:6.35MM; TURNS, NO. RoHS Compliant: Yes N沟道增强型高压功率MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS V 800V 27.0A 0.30/0.35 Ohm
File Size	61.59K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8075 APT8075BN APT8090BN
OCR Text	...DSS ID = ID [Cont.] @ 25C VGS = 15v VDD = 0.5 VDSS ID = ID [Cont.] @ 25C R G = 1.8 MIN TYP MAX UNIT 2410 370 120 88 8.9 44 13 18 62 24 ...3 656 6.2 1200 12 Volts ns C Amps 2 (VGS = 0V, IS = -ID [Cont.]) Reverse Recovery Time (IS...
Description	POWER MOS V 800V 13.0a 0.75 Ohm / 800V 12.0A 0.90 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	49.95K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDFS6N303
OCR Text	...NCE (pF) 500 Ciss Coss 15v 200 4 2 100 f = 1 MHz VGS = 0V 0.3 1 3 Crss 0 0 2 4 6 8 10 12 14 Q g , GATE CHARGE (nC) 50 0.1 10 30 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteri...
Description	N-Channel MOSFET with Schottky Diode
File Size	94.24K / 5 Page	View it Online	Download Datasheet

				Harris, Corp. Fairchild Semiconductor HARRIS[Harris Corporation]
Part No.	HGTG12N60C3D
OCR Text	...ithstand Time (Note 2) at VGE = 15v . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 1...3-35 HGTG12N60C3D Electrical Specifications TC = 25oC, Unless Otherwise Specified LIMITS PARAME...
Description	36 MACROCELL 3.3 VOLT ISP CPLD 4A00V的，的ufs系列N沟道IGBT的与反平Hyperfast二极 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	102.34K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHN9230
OCR Text	...VDS = VGS, I D = -1.0 mA VDS > -15v, IDS = -4.0 A VDS = 0.8 x Max. Rating,VGS = 0V VDS = 0.8 x Max. Rating VGS = 0V, TJ = 125C VGS = -20V V...3.0 C VDD -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by ...
Description	TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)
File Size	87.57K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL2910 L2910
OCR Text	... 175C IRL2910 1000 TOP VGS 15v 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 1000 ID , Drain-to-Source Current (A ) 100 ID , Drain-to-Source Current (A ) VGS 15v 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 100 10 10 ...
Description	RES THICK FILM POWER 10 OHM 5W HEXFET Power MOSFET
File Size	120.70K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRLU9343-701 IRLR9343 IRLU9343
OCR Text	...3 & IRLU9343-701 100 TOP VGS -15v -12V -10V -8.0V -5.5V -4.5V -3.0V -2.5V 100 TOP VGS -15v -12V -10V -8.0V -5.5V -4.5V -3.0V -2.5V -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) 10 BOTTOM 10 BOTTOM ...
Description	-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package -55V Single P-Channel HEXFET Power MOSFET in a I-Pak package DIGITAL AUDIO MOSFET DIODE MED-FAST BAS116 80VR 250MA 1.25VF@150MA 1.5US TO-236AB -55 150C 数字音频MOSFET
File Size	242.32K / 10 Page	View it Online	Download Datasheet

For 15v 3.0a Found Datasheets File :: 6855 Search Time::1.719ms
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