120v-100w pdf Datasheet P14 Full Text Search --- IC-ON-LINE


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120v-100w Datasheet PDF File

For 120v-100w Found Datasheets File :: 146 Search Time::1.75ms
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				INFINEON[Infineon Technologies AG]
Part No.	Q67040-A4463 SGW30N60 Q67040-S4237 Q67041-A4713 SGB30N60 SGP30N60
OCR Text	... SGB30N60 SGW30N60 20V 120V 480V 1nF Ciss VGE, GATE-EMITTER VOLTAGE 15V C, CAPACITANCE Coss 100pF Crss 10V 5V 0V 0nC 50nC 100nC 150nC 200nC 10pF 0V 10V 20V 30V QGE, GATE CHARGE ...
Description	IGBTs & DuoPacks - 30A 600V TO247AC IGBT IGBTs & DuoPacks - 30A 600V TO263AB SMD IGBT Fast S-IGBT in NPT-Technology Fast IGBT in NPT-technology Heat Sink; Package/Case:TO-220; Thermal Resistance:16.7 C/W; Mounting Type:Through Hole; Length:29.97mm; Height:12.7mm; Width:25.4mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes Heat Sink; Package/Case:TO-220; Thermal Resistance:16.7 C/W; Mounting Type:Through Hole; Length:29.97mm; Height:12.7mm; Width:25.4mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:No RoHS Compliant: No
File Size	413.03K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IKW75N60T
OCR Text	...MITTER VOLTAGE C iss 15V 120V 10V 480V c, CAPACITANCE 1nF C oss 5V 100pF C rss 0V 0nC 100nC 200nC 300nC 400nC 0V 10V 20V QGE, GATE CHARGE Figure 17. Typical gate charge (IC=75 A) VCE, C...
Description	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	408.05K / 13 Page	View it Online	Download Datasheet

				Vishay Intertechnology,Inc. Vishay Siliconix
Part No.	BAY80
OCR Text	...0mA IF=150mA Reverse current VR=120V VR=120 V, Tj=150C Breakdown voltage IR=100mA, tp/T=0.01, tp=0.3ms Diode capacitance VR=0, f=1MHz Differ...100W Parameter Forward voltage g Type Symbol VF VF VF VF VF IR IR V(BR) CD rf trr Min 0.4 0.63 0.73 ...
Description	Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:22-2 RoHS Compliant: No SILICON EPITAXIAL PLANAR DIODE From old datasheet system
File Size	39.84K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	5962-02563 5962-02564
OCR Text	...ating from nominal +28v, +50v, +120v or +270 v inputs with output power ranging from 80w to 120w. for applications requiring higher output p...100w; then the power dissipation at full load is given by because of the incorporation of many innov...
Description	66W -120W Total Output Power 50 Vin /-5 Vout Dual DC-DC Standard Converter in an AFL Package. DLA Number 5962-02563 66W -120W Total Output Power 50 Vin /-12 Vout Dual DC-DC Standard Converter in an AFL Package. DLA Number 5962-02564
File Size	178.33K / 11 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SGB15N60HS Q67040-S4535
OCR Text	...OLTAGE 1nF Ciss 10V 120V 480V c, CAPACITANCE 100pF Coss Crss 5V 0V 0nC 20nC 40nC 60nC 80nC 10pF 0V 10V 20V QGE, GATE CHARGE Figure 17. Typical gate charge (IC=15 A) VCE, COLLECT...
Description	High Speed IGBT in NPT-technology
File Size	321.77K / 11 Page	View it Online	Download Datasheet

				Sanyo
Part No.	2SA1477 2SC3787
OCR Text	...fT Cob VCE(sat) VBE(sat) VCB=(-)120V, IE=0 VEB=(-)4V, IC=0 VCE=(-)5V, IC=(-)10mA VCE=(-)10V, IC=(-)10mA VCB=(-)10V, f=1MHz IC=(-)50mA, IB=(-)5mA IC=(-)50mA, IB=(-)5mA (-)180 (-)160 (-)5 0.1 0.5 0.1 100 150 (4.0) 3.0 (-140) 70 V(BR)CBO IC=(-...
Description	NPN Epitaxial Planar Silicon Transistors 160V/140mA Switching Applications PNP Epitaxial Planar Silicon Transistors 160V/140mA Switching Applications PNP/NPN Epitaxial Planar Silicon Transistors
File Size	134.30K / 4 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SKP15N60NBSP SKP15N60
OCR Text	...GE, GATE-EMITTER VOLTAGE 15V 120V 480V C, CAPACITANCE 100pF Coss 10V Crss 5V 0V 0nC 25nC 50nC 75nC 100nC 10pF 0V 10V 20V 30V QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 15A) VC...
Description	SKP15N60, SKB15N60, SKW15N60 Fast S-IGBT in NPT-Technology From old datasheet system
File Size	299.66K / 14 Page	View it Online	Download Datasheet

				Sanyo
Part No.	2SC2344 2SA1011
OCR Text	...100 to 200 Conditions VCB=(-)120V, IE=0 VEB=(-)4V, IC=0 VCE=(-)5V, IC=(-)300mA VCE=(-)10V, IC=(-)50mA VCB=(-)10V, f=1MHz VCE=(-)5V, IC=(-)10mA Ratings min typ max (-)10 (-)10 60* 100 (30) 23 (-)1.5 200* Unit A A MHz pF pF V * : ...
Description	NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications PNP/NPN Epitaxial Planar Silicon Transistors
File Size	41.50K / 4 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	TDA2005
OCR Text	... of pulses with amplitude up to 120V and width of 2ms can be applied at point A. This type of protection is ON when the supply voltage (pulse or DC) exceeds 18V. For this reason the maximum operating supply voltage is 18V. Figure 33 Thermal...
Description	20W BRIDGE AMPLIFIER FOR CAR RADIO
File Size	250.40K / 20 Page	View it Online	Download Datasheet

For 120v-100w Found Datasheets File :: 146 Search Time::1.75ms
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