1200-1600 pdf Datasheet P14 Full Text Search --- IC-ON-LINE


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1200-1600 Datasheet PDF File

For 1200-1600 Found Datasheets File :: 11569 Search Time::1.219ms
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				MINI[Mini-Circuits]
Part No.	ZX10-4-11 ZX10-4-14 ZX10-4-19 ZX10-4-24 ZX10-4-27 ZX10-4-SERIES
OCR Text	...6 6.4 6.2 6.0 1100 S-1(dB) 1150 1200 1250 1300 1350 S-3(dB) 1400 1450 ZX10-4-14 INSERTION LOSS at RF level of -10 dBm 60 50 40 VSWR 30 20 10...1600 1700 1800 S-3(dB) 1900 ISOLATION (dB) at RF level of -10 dBm 60 50 at RF level of -10 dBm ZX...
Description	Power Splitters/Combiners 4 Way-0∑ 50з 800 to 2700 MHz Power Splitters/Combiners 4 Way-0 50 800 to 2700 MHz
File Size	158.52K / 2 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix] VishaySiliconix Vishay Intertechnology,Inc. Vishay Intertechnology, Inc.
Part No.	200D318X0006A1 202D318X0006A1 202D318X9006A1 200D 200D318X9006A1
OCR Text	...X0015A1 202D967X0015A1 0.25 3.1 1200.0 A2 200D128X0015A2 202D128X0015A2 0.21 2.3 1400.0 A3 200D148X0015A3 202D148X0015A3 0.18 1.7 1600.0 A1 200D168X0015A1 202D168X0015A1 0.25 4.2 2100.0 A2 200D218X0015A2 202D218X0015A2 0.19 3.1 2100.0 A4 20...
Description	Wet Tantalum Capacitors Wet Sintered Anode TANTALEX TANTAPAK Capacitor Assemblies WetTantalumCapacitorsWetSinteredAnodeTANTALEXTANTAPAKCapacitorAssemblies DB25 RJ45,8 WIRE,FEMALEMODUL DB25 RJ45,8 WIRE,MALE MODULA DB25 RJ45,8 WIRE,FEMALEMODUL 液体钽电容器烧结湿电容器阳极TANTALEX TANTAPAK大会
File Size	573.14K / 9 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC3824 2SC3824A
OCR Text	... VCC 1 tw 0 0 400 800 1200 1600 VCLAMP Collector-emitter voltage VCE (V) Rth t 103 (1)Without heat sink (2)With a 50x50x2mm Al heat sink Thermal resistance Rth (C/W) 102 (1) (2) 10 1 10-1 10-3 1...
Description	Silicon NPN triple diffusion planar type
File Size	89.30K / 4 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	BCP54M BCP54MBCP56M BCP55M BCP56M Q62702-C2595 Q62702-C2607 Q62702-C2606
OCR Text	... 100 C 25 C -50 C P tot 1200 1000 800 600 400 200 0 0 TA 10 1 5 20 40 60 80 100 120 C 150 10 0 0 10 10 1 10 2 TA,TS 10 3 mA 10 4 C Permissible Pulse Load R thJS = f (tp) Permissible Puls...
Description	NPN Silicon AF Transistors (For AF driver and output stages High collector current) From old datasheet system NPN Silicon AF Transistors (For AF driver and output stages High collector current) 1 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
File Size	30.54K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BSM75GD120DN2 075D12N2 C67070-A2516-A67
OCR Text	...ctor-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package ECONOPACK 3 Ordering Code C67070-A2516-A67 1200V 103A VCE ...1600 VCE 0 0 200 400 600 800 1000 1200 V 1600 VCE Semiconductor Group 6 Mar-27-1996 B...
Description	IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT From old datasheet system
File Size	185.11K / 9 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BUK127-50DL
OCR Text	...BUK127-50DL 500 1600 1400 1200 1000 5V 400 VIS / V = 300 3V 200 = IIS = IISL 0 -50 0 50 Tj / C 100 150 5V 4V 800 600 400 200 0 0 5 10 15 20 25 Pd / W 30 35 40 45 50 100 Fig.10. Typical DC input currents. IIS & IISL = f(Tj)...
Description	PowerMOS transistor Logic level TOPFET
File Size	95.19K / 11 Page	View it Online	Download Datasheet

				Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken Vishay Siliconix
Part No.	BY203 BY203-12S BY203-16S BY203-20S BY203/12S BY203/16S
OCR Text	...WM VRWM IFAV IFSM Tj=Tstg Value 1200 1600 2000 250 20 -55...+150 Unit V V V mA A C tp=0.1ms Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=5mm, TL=constant maximum lead length Symbol RthJA RthJA Val...
Description	Silicon Mesa Rectifiers 硅梅萨整流器
File Size	33.30K / 3 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BYD43 BYD43-16 BYD43-18 BYD43-20 BYD43U BYD43V BYD43_2
OCR Text	... - - 11 6 A A - - - - - - - - - 1200 1400 1600 1800 2000 1.20 0.68 V V V V V A A PARAMETER non-repetitive peak reverse voltage - - - - - 1300 1500 1700 1900 2100 V V V V V CONDITIONS MIN. MAX. UNIT 0.65 0.30 A A 1996 Jun 05 2 ...
Description	Fast soft-recovery rectifiers 0.3 A, 2000 V, SILICON, SIGNAL DIODE From old datasheet system
File Size	67.65K / 11 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM200DY-28H
OCR Text	...ERES) 100 103 0 0 400 800 1200 1600 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM200DY-28H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VAL...
Description	IGBT Modules:1400V HIGH POWER SWITCHING USE INSULATED TYPE
File Size	49.59K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM300DY-28H
OCR Text	...ERES) 100 103 0 0 400 800 1200 1600 2000 2400 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM300DY-28H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORM...
Description	IGBT Modules:1400V HIGH POWER SWITCHING USE INSULATED TYPE
File Size	49.35K / 4 Page	View it Online	Download Datasheet

For 1200-1600 Found Datasheets File :: 11569 Search Time::1.219ms
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