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Inchange Semiconductor ...
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| Part No. |
2SC3506
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| OCR Text |
...mitter sustaining voltage i c =0.5a ;l=50mh 800 v v cesat collector-emitter saturation voltage i c =2a ;i b =0.4a 1.5 v v besat base-emitter saturation voltage i c =2a ;i b =0.4a 1.5 v i cbo collector cut-off current v... |
| Description |
Silicon NPN Power Transistors
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| File Size |
65.89K /
4 Page |
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Inchange Semiconductor ...
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| Part No. |
2N5655 2N5656 2N5657
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| OCR Text |
...v i c collector current 0.5 a i cm collector current-peak 1.0 a i b base current 0.25 a p d total power dissipatio...50mh 350 v v cesat-1 collector-emitter saturation voltage i c =100ma ;i b =10ma 1.0 v v c... |
| Description |
Silicon NPN Power Transistors
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| File Size |
37.88K /
3 Page |
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SamHop Microelectronics...
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| Part No. |
SDUD03N70
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| OCR Text |
...aximum ratings v gs =0v,i s =1a 0.79 v notes www.samhop.com.tw 2 8.3 _ _ a.pulse test:pulse width < 300us, duty cycle < 2%. b.guaranteed...50mh,v dd = 50v.(see figure13) 3.9 1.4 3 dec,24,2013 ver 1.1 sdu/d03n70
www.samhop.com.tw dec,2... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
132.47K /
11 Page |
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SamHop Microelectronics...
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| Part No. |
SDUD04N65
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| OCR Text |
...aximum ratings v gs =0v,i s =2a 0.81 v notes www.samhop.com.tw 2 8.2 _ _ a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse wi...50mh,v dd = 50v.(see figure13) e.drain current limited by maximum junction temperature. 2.5 1.4 3... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
126.75K /
11 Page |
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Taiwan Semiconductor Co...
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| Part No. |
TSM70N900 TSM70N900CIC0G
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| OCR Text |
0.9 ? n-channel power mosfet 1/9 ...50mh, i as = 1.6a, v dd = 50v, r g = 25 ? , starting t j = 25 o c 4. pulse test: pw 300s, d... |
| Description |
700V, 4.5A, 0.9 N-Channel Power MOSFET
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| File Size |
439.44K /
9 Page |
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Cystech Electonics Corp...
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| Part No. |
MTED6N25J3
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| OCR Text |
...package shipping mted6n25j3-0-t3-g to-252 (pb-free lead plating an d halogen-free package) 2500 pcs / tape & reel mt...50mh, i d =2a, v dd =50v (note 2) e as 100 repetitive avalanche energy@ l=0.1mh ... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
261.40K /
9 Page |
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it Online |
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