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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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| Part No. |
K7I323682M K7I321882M K7M161825A-QCI65
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| OCR Text |
...M
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Pin name change from DLL to Doff. 2. Vddq range change from 1.5V to ...4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L, 4M-8M,4N,8N 10R 11R 2R 1R 1B,9B,10B... |
| Description |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM 512Kx36 & 1Mx18 Pipelined NtRAM
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| File Size |
375.01K /
17 Page |
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it Online |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K7I643682M-FC30 K7I641882M K7I641882M-EI16 K7I641882M-EI20 K7I641882M-EI25 K7I641882M-EI30 K7I641882M-FC16 K7I641882M-FC20 K7I641882M-FC25 K7I641882M-FC30 K7I643682M K7I643682M-EI16 K7I643682M-EI20 K7I643682M-EI25 K7I643682M-EI30 K7I643682M-FC16 K7I643682M-FC20 K7I643682M-FC25
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| OCR Text |
...tice.
-1-
Aug. 2005 Rev 1.0
K7I643682M K7I641882M
Document Title
2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM
2Mx36 & 4Mx18 DDRII CI...4J,8J,4K,8K,4L,8L 2A,4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L, 4M-8M,4N,8N 10R 11R 2R 1R 1B,9B,10B,1C,... |
| Description |
72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
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| File Size |
301.37K /
17 Page |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K7I643684M-FI30 K7I641884M K7I641884M-CE25 K7I641884M-CE30 K7I641884M-CI25 K7I641884M-CI30 K7I641884M-FC16 K7I641884M-FC20 K7I641884M-FCI16 K7I641884M-FCI20 K7I641884M-FE25 K7I641884M-FE30 K7I641884M-FECI25 K7I641884M-FECI30 K7I641884M-FI16 K7I641884M-FI20 K7I641884M-FI25 K7I641884M-FI30 K7I643684M K7I643684M-EC25 K7I643684M-EC30 K7I643684M-EI25 K7I643684M-EI30 K7I643684M-FC16 K7I643684M-FC20 K7I643684M-FC25 K7I643684M-FC30 K7I643684M-FCI16 K7I643684M-FCI20 K7I643684M-FECI25 K7I643684M-FECI30 K7I643684M-FI16 K7I643684M-FI20 K7I643684M-FI25
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| OCR Text |
...M
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Correct the JTAG ID register definition 2. Correct the AC timing par...4J,8J,4K,8K,4L,8L 4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L, 4M-8M,4N,8N 10R 11R 2R 1R 2A,1B,9B,10B,1C,... |
| Description |
72Mb DDRII SRAM Specification
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| File Size |
409.12K /
18 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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| Part No. |
K7J163682B K7J161882B
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| OCR Text |
...M
Revision History
Rev. No. 0.0 0.1 0.2 0.3 History 1. Initial document. 1. Change the JTAG Block diagram 1. Add the speed bin (-25) 1. ...4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M, 8M,4N,8N 10R 11R 2R 1R 3A, 9A DE... |
| Description |
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
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| File Size |
371.63K /
17 Page |
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it Online |
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7J323682M K7J321882M
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| OCR Text |
...M
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Pin name change from DLL to Doff 2. Update JTAG test conditions. 3. ...4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M, 8M,4N,8N 10R 11R 2R 1R 3A DESCRI... |
| Description |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
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| File Size |
304.26K /
17 Page |
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it Online |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K7J643682M-FECI30 K7J641882M K7J641882M-FC16 K7J641882M-FC20 K7J641882M-FC25 K7J641882M-FC30 K7J641882M-FECI16 K7J641882M-FECI20 K7J641882M-FECI25 K7J641882M-FECI30 K7J643682M K7J643682M-FC16 K7J643682M-FC20 K7J643682M-FC25 K7J643682M-FC30 K7J643682M-FECI16 K7J643682M-FECI20 K7J643682M-FECI25
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| OCR Text |
...tice.
-1-
Aug. 2005 Rev 1.0
K7J643682M K7J641882M
Document Title
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
2Mx36-bit, 4Mx18-bit DDR I...4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M, 8M,4N,8N 10R 11R 2R 1R DESCRIPTI... |
| Description |
72Mb M-die DDRII SRAM Specification
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| File Size |
312.35K /
17 Page |
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it Online |
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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| Part No. |
K7Q163652A K7Q161852A
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| OCR Text |
...M
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Amendment 1) Page 3,4 PIN NAME DESCRIPTION W (4A) : from Read Contro...4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E, 6F,6G,6H,6J,6K,5L-7L,4M-8M,4N,8N 10R 11R 2R 1R 1A,3A,7A,... |
| Description |
512Kx36 & 1Mx18 QDRTM b2 SRAM Electrical Outlet Connector; Voltage Rating:125V; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes 512Kx36
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| File Size |
503.77K /
17 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7R320982C K7R323682C-FC20 K7R323682C-FC25 K7R323682C-FCI20 K7R323682C-FCI30 K7R323682C-FC30 K7R323682C-FCI25 K7R323682C-FEC30 K7R323682C-FEC20 K7R323682C-FEC25 K7R323682C-FC250
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| OCR Text |
... rev. no. 0.0 0.1 0.2 0.3 1.0 1.1 remark advance preliminary preliminary preliminary...4j,8j,4k,8k,4l,8l output power supply (1.5v or 1.8v) v ss 4c,8c,4d-8d,5e-7e,6f,6g,6h,6j,6k,5l-7l,4m,... |
| Description |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
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| File Size |
462.59K /
20 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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| Part No. |
K7J641882M K7J643682M K7J641882M-FC16 K7J641882M-FC20 K7J641882M-FC25 K7J641882M-FC30 K7J643682M-FC16 K7J643682M-FC20 K7J643682M-FC25 K7J641882M-FECI16 K7J641882M-FECI25 K7J641882M-FECI20 K7J641882M-FECI30 K7J643682M-FECI16 K7J643682M-FECI20 K7J643682M-FECI25 K7J643682M-FECI30 K7J643682M-FC30
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| OCR Text |
0 aug. 2005 72mb m-die ddrii sram specification 165 fbga with pb & pb-free (rohs compliant) * samsung electronics reserves the right to ch...4j,8j,4k,8k,4l,8l output power supply ( 1.5v or 1.8v ) v ss 2a,10a,4c,8c,4d-8d,5e-7e,6f,6g,6h,6j,6k,... |
| Description |
72Mb M-die DDRII SRAM Specification 72Mb的M -模条DDRII规格的SRAM
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| File Size |
318.96K /
17 Page |
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it Online |
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MOTOROLA INC
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| Part No. |
MCM69R536ZP4.4R
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| OCR Text |
...e unit core supply voltage v dd 0.5 to 4.6 v output supply voltage v ddq 0.5 to v dd + 0.5 v voltage on any pin v in 0.5 to v dd + 0.5 v input current (per i/o) i in 50 ma output current (per i/o) i out 70 ma operating temperature t a 0... |
| Description |
32K X 36 LATE-WRITE SRAM, 2.2 ns, PBGA119
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| File Size |
142.54K /
20 Page |
View
it Online |
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