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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT38M50J
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| OCR Text |
0.10 Max
N-Channel MOSFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low inp... |
| Description |
N-Channel MOSFET
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| File Size |
262.46K /
4 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT6015LVFR APT6015B2VFR
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| OCR Text |
0.150
POWER MOS V(R) FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new tech...38A j G L 5 I I [Cont.], di/ = 100A/s, T 150C, R = 2.0, V = 200V. S D j G R dt
APT Reserves the... |
| Description |
POWER MOS V FREDFET
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| File Size |
132.66K /
4 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT75GP120B2
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| OCR Text |
... Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1000A) Gate Threshold Volt... |
| Description |
MOSFET
POWER MOS 7 IGBT
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| File Size |
94.63K /
6 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT8020JFLL
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| OCR Text |
0.220
S G D S
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode ...38A
EON includes diode reverse recovery.
SWITCHING ENERGY (J)
2000
SWITCHING ENERGY (J)
... |
| Description |
40 A, 800 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
256.97K /
5 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT8020JLL_04 APT8020JLL04
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| OCR Text |
0.200
S G D S
POWER MOS 7
(R)
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode p...38A
L = 100H E ON includes diode reverse recovery.
4000
T = 125C L = 100H EON includes diod... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
159.01K /
5 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT8020LFLL APT8020B2FLL
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| OCR Text |
0.220
POWER MOS 7
(R)
R
FREDFET
B2FLL
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode...38A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 38A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = ... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
244.54K /
5 Page |
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MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Advanced Power Technolo...
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| Part No. |
APT8020LLL APT8020B2LL APT8020B2LL_04 APT8020B2LL04 APT8020B2LLG
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| OCR Text |
0.200
POWER MOS 7
(R)
R
MOSFET
T-MAXTM
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode ...38A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 38A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2... |
| Description |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 38; RDS(on) (Ohms): 0.2; BVDSS (V): 800;
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
156.54K /
5 Page |
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it Online |
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California Micro Devices Corporation
CALMIRCO[California Micro Devices Corp]
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| Part No. |
CM310701S CM3107 CM3107-00SB CM3107-00SH CM3107-00SM CM3107-00SN CM3107-12SH
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| OCR Text |
...wer MOSFETs Excellent accuracy (0.5% load regulation) Selectable output (1.225V/1.45V or VDDQ/2) 8-lead SOIC and PSOP packages Lead-free ver...38A. If this average current is exceeded, the device will go over-temperature and the output will dr... |
| Description |
2 Amp Source/ Sink Bus Termination Regulator for DDR Memory and Front Side Bus Applications
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| File Size |
1,202.54K /
13 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
FA38SA50LC
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| OCR Text |
...e
D
VDSS = 500V RDS(on) = 0.13
G
ID = 38A
S
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and... |
| Description |
500V Single N-Channel HEXFET Power MOSFET in a SOT-227 (Iso) package
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| File Size |
167.34K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDB8878
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| OCR Text |
...(Note 4) L = 1mH, IAS = 11A L = 0.03mH,IAS = 38A Continuous (TC = 25oC, VGS = 10V) 48 42 170 60 21 47.3 -55 to 175 A A A mJ W
o
Ratings 30 20
Units V V
C
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case (No... |
| Description |
N-Channel Logic Level PowerTrench? MOSFET 30V, 48A, 14mOhm
N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 48A, 14mOhm
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| File Size |
215.84K /
6 Page |
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it Online |
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Price and Availability
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