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Sensitron Semiconductor
SENSITRON[Sensitron]
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| Part No. |
SHD224502
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| OCR Text |
...AKDOWN VOLTAGE VGS = 0V, ID = 1.0 mA STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 21A GATE THRESHOLD VOLTAGE VDS = VGS, ID = 2...34A, TURN OFF DELAY TIME VGS = 10V FALL TIME DIODE FORWARD VOLTAGE IS = 34A, VGS = 0V Pulse test, t ... |
| Description |
HERMETIC POWER MOSFET N-CHANNEL 34 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
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| File Size |
46.95K /
3 Page |
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IRF[International Rectifier]
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| Part No. |
RHN7150
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| OCR Text |
...NEL
MEGA RAD HARD
100 Volt, 0.055, MEGA RAD HARD HEXFET
International Rectifier's MEGA RAD HARD technology HEXFETs demonstrate excelle...34A 34A
Features:
s s s s s s s s s s s s s
Radiation Hardened up to 1 x 10 6 Rads (Si) Singl... |
| Description |
TRANSISTOR N-CHANNEL
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| File Size |
452.79K /
14 Page |
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IRF[International Rectifier]
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| Part No. |
IRL3103SPBF IRL3103LPBF
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| OCR Text |
...r M3 srew
Max.
64 45 220 94 0.63 16 34 22 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V A mJ V/ns C
...34A m 16 VGS = 4.5V, ID = 28A --- V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 34A 25 VDS = 30V, V... |
| Description |
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
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| File Size |
642.43K /
10 Page |
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IRF[International Rectifier]
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| Part No. |
IRHNB7264SE IRHNB7264SE-15
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| OCR Text |
...on Level RDS(on) 100K Rads (Si) 0.11 ID 34A
IRHNB7264SE 250V, N-CHANNEL
RAD Hard HEXFET TECHNOLOGY
(R)
SMD-3
International Rectifiers RADHardTM HEXFET(R) MOSFET technology provides high performance power MOSFETs for space applicat... |
| Description |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-3 package
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| File Size |
237.36K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRHNA7264SE
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| OCR Text |
...FECT (SEE) RAD HARD
250Volt, 0.110, (SEE) RAD HARD HEXFET
International Rectifier's (SEE) RAD HARD technology HEXFETs demonstrate virtu...34A
Features:
s s s s s s s s s s s s s
Radiation Hardened up to 1 x 10 5 Rads (Si) Single Ev... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.110ohm, Id=34A)
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| File Size |
98.87K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHNA57260SE JANSR2N7473U2
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| OCR Text |
...ber IRHNA57260SE 100K Rads (Si) 0.038 53.5A JANSR2N7473U2
International Rectifier's R5TM technology provides high performance power MOSFE...34A A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 34A A VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125C... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2)
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| File Size |
176.00K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRFPS35N50LPBF
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| OCR Text |
... RDS(on) typ. Trr typ. ID
500V 0.125 170ns 34A
Features and Benefits * SuperFast body diode eliminates the need for external diodes in ZVS applications. * Lower Gate charge results in simpler drive requirements. * Enhanced dv/dt capabil... |
| Description |
SMPS MOSFET
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| File Size |
149.76K /
8 Page |
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http://
SEME-LAB[Seme LAB]
SemeLAB
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| Part No. |
IRFN044SMD
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| OCR Text |
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) ...34A W 0.040W
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
22.17K /
2 Page |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
IRFM1310ST
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| OCR Text |
0 4 0 ) 2 0 .0 7 (0 .7 9 0 ) 1 3 .7 2 (0 .5 4 0 )
N-CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on) 100V 34A W 0.070W
1 3 .7 2 (0 .5 4 0 )
1 2 .7 (0 .5 0 0 ) m in .
6 .3 5 (0 .2 5 0 )
1 .0 2 (0 .0 4 0 ) 3 .8 1 (0 .1 5 0 ) 2 p lc ... |
| Description |
NCHANNEL POWER MOSFET
N-CHANNEL POWER MOSFET
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| File Size |
23.31K /
2 Page |
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it Online |
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