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MPS[Monolithic Power Systems]
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| Part No. |
MP2309DS EV2309DS-00A MP2309
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| OCR Text |
... MBRS130 Voltage/Current Rating 30V, 1A 30V, 1A 30V, 1A Vendor Diodes, Inc. Diodes, Inc. International Rectifier
For example, for a 3.3V ...0.1F, should be placed as close to the IC as possible. When using ceramic capacitors, make sure that... |
| Description |
1A, 23V, 340KHz Synchronous Rectified Step-Down Converter
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| File Size |
330.33K /
10 Page |
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Bi technologies List of Unclassifed Manufacturers ETC[ETC] List of Unclassifed Man...
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| Part No. |
7721-2A 7721 7721-1A
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| OCR Text |
...,RG = 10 w/tail VGE = 0V, VCC = 30V, f = 1MHz VGE = 0V, VCC = 30V, f = 1MHz VGE = 0V, VCC = 30V, f = 1MHz
2.4 2.8 3.0 55 11 19 100 56 .55 1400 250 42
150 .94 VR = 600V VR = .8x600V, TJ = 125C IF = 8A IF = 8A, TJ = 150C IF = 1A, -di/dt... |
| Description |
H Bridge Power Module
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| File Size |
89.03K /
5 Page |
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it Online |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4610L AO4610
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| OCR Text |
...
Features
n-channel VDS (V) = 30V ID = 8.5A(VGS=10V) RDS(ON) < 18m (VGS=10V) < 28m (VGS=4.5V) VF<0.5V@1A p-channel -30v -7.1A(VGS = -10V) RDS(ON) < 25m (VGS = -10V) < 40m (VGS = -4.5V)
D2 S2/A G2 S1 G1 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1 K... |
| Description |
Complementary Enhancement Mode Field Effect Transistor
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| File Size |
203.87K /
9 Page |
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it Online |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4703L AO4703
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| OCR Text |
...K G S A
Features
VDS (V) = -30v ID = -12A (VGS =- 20V) RDS(ON) < 14m (VGS =- 20V) RDS(ON) < 15m (VGS = -10V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A
D
K
SOIC-8
Absolute Maximum Ratings T =25C unless otherwise noted A Par... |
| Description |
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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| File Size |
214.66K /
5 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4912
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| OCR Text |
... q2 v ds (v) = 30v v ds (v) = 30v i d = 8.5a i d =7a (v gs = 10v) r ds(on) < 17m ? ...0.5v@1a the ao4912 uses advanced trench technology to provide excellent r ds(on) and low gate cha... |
| Description |
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
249.95K /
8 Page |
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it Online |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4709L AO4709
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| OCR Text |
...ntical.
Features
VDS (V) = -30v ID = -8A (VGS = -10V) RDS(ON) < 33m (VGS = -10V) RDS(ON) < 56m (VGS = -4.5V) SCHOTTKY VDS (V) = 30V,IF = 3A, VF<0.5V@1A
A S S G
1 2 3 4
8 7 6 5
D/K D/K D/K D/K G
D
K
SOIC-8
S
A
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| Description |
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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| File Size |
191.12K /
5 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4914
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| OCR Text |
... q2 v ds (v) = 30v v ds (v) = 30v i d = 8.5a i d = 8.5a r ds(on) < 18m ? <18m ? ...0.5v@1a the ao4914 uses advanced trench technology to provide mosfets make a compact and efficient ... |
| Description |
Dual N-Channel Enhancement Mode Field
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| File Size |
246.00K /
8 Page |
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it Online |
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Alpha & Omega Semiconductor... AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4850
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| OCR Text |
...6 10 0.77 1 2.5 290 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 54 24 2.4 5.14 VGS=10V, VDS=30V, ID=3.1A 2.34 0.97 1.18 4 VGS=10V, VDS=30V, RL=9.7, RGEN=3 IF=3.1A, dI/dt=100A/s 3.4 14.4 2.4 30.2 21.5 45 3.5 7 380 130 195 165 2.3 Min 75 1... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
109.46K /
4 Page |
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it Online |
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Price and Availability
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