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  -3.9ghz Datasheet PDF File

For -3.9ghz Found Datasheets File :: 929    Search Time::2ms    
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    CXG1210UR

Sony Corporation
Part No. CXG1210UR
OCR Text ...n-chip logic for operation with 3 CMOS control inputs. The Sony JPHEMT process is used for low insertion loss and on-chip logic circuit. (Ap...9GHz 900MHz Isolation ISO. 1.5GHz 1.9GHz VSWR VSWR 2fo Harmonics 3fo 50 *1 *3 *1 *3 *2 Min. T...
Description High Power 3P3T Switch with Logic Control

File Size 71.55K  /  5 Page

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    Sanyo
Part No. 2SC4407
OCR Text ...t:mm 2059B [2SC4407] 0.425 0.3 3 0~0.1 * High cutoff frequency : fT=3.0GHz typ * High power gain : PG=12dB typ (f=0.9GHz) * Small noise figure : NF=3.0dB typ (f=0.9GHz) * Very small-sized package permitting 2SC4407applied sets to be m...
Description NPN Epitaxial Planar Silicon Transistor VHF/UHF Mixer, Local Oscillator Applications

File Size 104.55K  /  5 Page

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    CXG7001FN

SONY[Sony Corporation]
Part No. CXG7001FN
OCR Text ... * Input power 6 1.5 2.5 550 3 V V V mA W VCTL 6 V VDD PRF 6 +10 V dBm <Common to each block> * Channel temperatu...9GHz by this capacitor (Typ. 13pF). GND. Connector for the external capacitor. IF AMP distortion is ...
Description Power Amplifier/Antenna Switch Low Noise Down Conversion Mixer for PHS

File Size 115.10K  /  8 Page

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    Sanyo
Part No. 2SC4404
OCR Text ...t:mm 2059B [2SC4404] 0.425 0.3 3 0~0.1 Features * High cutoff frequency : fT=5.0GHz typ * High power gain : MAG=14dB typ (f=0.9GHz) * Small noise figure : NF=2.2dB typ (f=0.9GHz) * Very small-sized package permitting 2SC4404applied s...
Description NPN Epitaxial Planar Silicon Transistor UHF Local Oscillator, Wide-Band Amplifier Applications

File Size 112.71K  /  5 Page

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    Q62702-F1377 BFP180

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1377 BFP180
OCR Text ...FP 180 RDs Q62702-F1377 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...9GHz VCE = Parameter 20 10V dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 8V dB...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)
From old datasheet system

File Size 76.23K  /  8 Page

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    TIM7179-8UL06

Toshiba Semiconductor
Part No. TIM7179-8UL06
OCR Text ...VGSO CONDITIONS VDS= 3V IDS= 3.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V IGS= -100A UNIT mS V A V C/W MIN. -1.0 -5 TYP. MAX. 1800 -2.5 5.2 2.5 -4.0 3.5 Rth(c-c) Channel to Case u The information contained herein is prese...
Description HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHz

File Size 44.43K  /  4 Page

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    MAX2016 MAX2016ETI MAX2016ETID MAX2016ETITD MAX2016ETI-T

MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
Part No. MAX2016 MAX2016ETI MAX2016ETID MAX2016ETITD MAX2016ETI-T
OCR Text ... CODE 28 Thin QFN-EP*, T2855-3 bulk 28 Thin QFN-EP*, T2855-3 T/R 28 Thin QFN-EP*, T2855-3 lead free, bulk 28 Thin QFN-EP*, T2855-3 lead f...9GHz RF Input Power Range 3dB Dynamic Range Range Center Temperature Sensitivity Slope Typical Slope...
Description 2.7 V to 5.25 V, LF-to-2.5 GHz dual logarithmic detector/controller for power, gain, and VSWR measurement
LF-to-2.5GHz Dual Logarithmic Detector/ Controller for Power, Gain, and VSWR Measurements
LF-to-2.5GHz Dual Logarithmic Detector/Controller for Power, Gain, and VSWR Measurements

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    Q62702-F1490 BFR180W

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1490 BFR180W
OCR Text ...R 180W RDs Q62702-F1490 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...9GHz VCE = Parameter 18 dB 16 10V 3V 2V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter ...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)
From old datasheet system

File Size 56.55K  /  7 Page

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    Sanyo
Part No. 2SA1669 0112
OCR Text ...s * High cutoff frequnecy : fT=3.0GHz typ. * High power gain : MAG=11dB typ (f=0.9GHz) * Small noise figure : NF=2.0dB typ (f=0.9GHz) Package Dimensions unit:mm 2018A [2SA1669] C : Collector B : Base E : Emitter Specifications ...
Description PNP Epitaxial Planar Silicon Transistor High-Frequency Amplifier Applications
From old datasheet system

File Size 128.30K  /  5 Page

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