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IXYS, Corp.
IXYS[IXYS Corporation]
Directed Energy
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| Part No. |
DE275-501N16A DE275-501N16
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| OCR Text |
...less otherwise specified 1.6mm (0.063 in) from case for 10 s
VDSS ID25 RDS(on) PDHS
Maximum Ratings 500 500 20 30 16 98 16 20 5 >200 375...2nH) No beryllium oxide (BeO) or other hazardous materials Low gate charge and capacitances
min. ... |
| Description |
RF Power MOSFET VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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| File Size |
75.71K /
3 Page |
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IXYS, Corp.
IXYS[IXYS Corporation]
Directed Energy
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| Part No. |
DE275X2-501N16A DE275X2-501N16
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| OCR Text |
...) PDHS
= = = =
500 V 16 A 0.5 750 W
The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configurat...2nH) No beryllium oxide (BeO) or other hazardous materials Low gate charge and capacitances
RthJH... |
| Description |
RF Power MOSFET 射频功率MOSFET
RF Power MOSFET 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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| File Size |
77.70K /
3 Page |
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it Online |
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DELTA[Delta Electronics, Inc.]
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| Part No. |
DFBM-CA220
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| OCR Text |
...7~3.6V -40~+85J 50[ 10.5*10.5*2.0 (mm)
Data Sheet
Feb 24, 2005 Proprietary Information and Specifications are Subject to Change
DFB...2nH
J4 MIC
2 1
R6 2K2 C9 15P
Data Sheet
Feb 24, 2005 Proprietary Information and Spec... |
| Description |
Bluetooth Module Class2
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| File Size |
71.60K /
7 Page |
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it Online |
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Electronic Theatre Controls, Inc.
ETC[ETC]
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| Part No. |
FC1703
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| OCR Text |
...uld be connected to GND through 0 ohm. Low -Band RF Input. Requires a blocking capacitor which may be used as part of the input matching net...2nH
LO/2 C6 10nF
J5 LO_IN
R5 100 ohm *0.2dB Line Loss for Cellular* *0.3dB Line Loss for PCS*... |
| Description |
Receiver RFIC for Dual-Band Triple Mode
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| File Size |
507.07K /
17 Page |
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it Online |
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VISAY[Vishay Siliconix]
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| Part No. |
IMC-0805
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| OCR Text |
...0 300 200 150 150 100 100 80 80 0.08 0.08 0.10 0.12 0.13 0.14 0.18 0.18 0.22 0.22 0.26 0.30 0.31 0.35 0.39 0.44 0.48 0.66 0.76 1.13 1.24 1.4...2nH. 10% for 6.8nH to 1,000nH. 5% for 33nH to 1,000nH. Temperature Range: - 40C to +105C (no load)... |
| Description |
Inductors
High Frequency, Surface Mount, Molded
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| File Size |
61.38K /
1 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXZ2210N50L IXZ210N50L
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| OCR Text |
...0A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0
VDSS ID25
= =
500 V 10 A
Maximum Ratings 500 500 20 30 10 60 16 TBD 5 >200
IXZ210N50...2nH) * No beryllium oxide (BeO) or other
hazardous materials Advantages
* High Performance RF Pa... |
| Description |
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
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| File Size |
245.17K /
9 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXZ308N120
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| OCR Text |
...0A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0
VDSS ID25 RDS(on) PDC
= = = =
1200 V 8.0 A 2.1 880 W
Maximum Ratings 1200 1200 20 30...2nH) No beryllium oxide (BeO) or other hazardous materials
VGS = 20 V, ID = 0.5ID25 Pulse test, t... |
| Description |
Z-MOS RF Power MOSFET
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| File Size |
143.79K /
3 Page |
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it Online |
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Maxim Integrated Produc...
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
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| Part No. |
MAX2240EBL MAX2240
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| OCR Text |
...o Low 105mA Operating Current o 0.5A Low-Power Shutdown Mode Current o +2.7V to +5V Single-Supply Operation o Miniature Chip-Scale Package (...2nH* (BOARD TRACE) BIAS LOGIC INPUTS D0 D1 SHDN RFIN BIAS & POWER CONTROL MATCH RFOUT GND1 *INDUCTAN... |
| Description |
2.5GHz, 20dBm Power Amplifier IC in UCSP Package
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| File Size |
177.72K /
10 Page |
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it Online |
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