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  XL2596S-5.0E1 Datasheet PDF File

For XL2596S-5.0E1 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

    TOSHIBA
Part No. TK100E10N1
Description Power MOSFET (N-ch single 60V<VDSS≤150V)

File Size 248.25K  /  9 Page

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HUA FENG CIRCUIT





    Inchange Semiconductor ...
Part No. TK100E10N1
Description isc N-Channel MOSFET Transistor

File Size 332.16K  /  2 Page

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    BL-LS2012B0E1

BetLux Electronics
Part No. BL-LS2012B0E1
Description 2.0mmx1.25mm SMD, 0.8mm THICKNESS

File Size 528.46K  /  6 Page

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    BL-LS3216C0E1

BetLux Electronics
Part No. BL-LS3216C0E1
Description 3.2mmx1.6mm SMD, 1.1mm THICKNESS

File Size 524.01K  /  6 Page

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    BL-LS3210A0E1

BetLux Electronics
Part No. BL-LS3210A0E1
Description 3.2mmx1.0mm SMD, 1.5mm THICKNESS

File Size 536.12K  /  6 Page

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    SH7750 SH7750E10A

Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
Part No. SH7750 SH7750E10A
Description Hitachi Microcomputer Development Environment System SH7750 E10A Emulator
Hitachi Microcomputer Development Environment System SH7750 E10A Emulator

File Size 1,537.10K  /  237 Page

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    Arizona Microtek, Inc.
Part No. AZ10E142FN
Description ECL/PECL 9-bit Shift Register ECL / PECL位移位寄存器

File Size 71.20K  /  5 Page

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    BT138 BT138-600D BT138-600E BT138-800E BT138-600E127 BT138-600D127

NXP Semiconductors N.V.
Part No. BT138 BT138-600D BT138-600E BT138-800E BT138-600E127 BT138-600D127
Description 4Q Triac 4Q双向可控
12 A four-quadrant triacs, sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 600 V; Package: SOT78 (TO-220AB); Container: Tube pack
12 A four-quadrant triacs, sensitive gate; Package: SOT78 (TO-220AB); Container: Tube pack

File Size 75.91K  /  12 Page

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    MK09-1C90E11 MK091C90E

Meder Electronic
Part No. MK09-1C90E11 MK091C90E
Description MK Reed Sensor
   Reed sensor

File Size 122.35K  /  1 Page

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    MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D
Description TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system

File Size 156.99K  /  8 Page

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