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				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF840B IRFS840B IRFS840 IRF840
OCR Text	... Units V A A A V mJ A mJ V/ns w w/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energ...static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 4....
Description	500V N-Channel MOSFET
File Size	908.43K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	...0 (1.6mm from case) Units A w w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient (PCB...static Drain-to-Source On-Resistance --- VGS(th) Gate Threshold Voltage 2.0 gfs Forward Transconduct...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	IRF9130SMD
OCR Text	...9 (0 .4 0 9 ) 2 -100V -8A w 0.35w 0 .7 6 (0 .0 3 0 ) m in . 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 ...static ELECTRICAL RATINGS Drain - Source Breakdown Voltage Test Conditions VGS = 0 ID = 1mA VGS ...
Description	P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POwER MOSFET FOR HI.REL APPLICATIONS
File Size	20.44K / 2 Page	View it Online	Download Datasheet

				SEMELAB LTD SEME-LAB[Seme LAB]
Part No.	IRF9140
OCR Text	... ns C nH RJC RCS RJA C/w Notes 1) Pulse Test: Pulse width 300ms, 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. ...
Description	P-CHANNEL POwER MOSFET
File Size	21.26K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text	...10s) 11.5 (typical) Units A w w/C V mJ A mJ V/ns o C g www.irf.com 1 01/22/01 IRF9230 Electrical Characteristics @...static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate...
Description	TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) CAP CER 250VAC 82PF 5% SL 1808 6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POwER, MOSFET, TO-204AA
File Size	148.64K / 7 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited International Rectifier SEME-LAB[Seme LAB]
Part No.	IRF9240 IRF9240-SMD
OCR Text	... 15 18 12 nH nH Max. Unit 1.0 C/w C/w C/w C Unit A V ns ns 1300 450 250 90 nC pF 0.5 Min. -200 -2 Typ. Max. -4 -100 100 -250 -1000 Unit V V nA nA mA mA A w S THERMAL CHARACTERISTICS Characteristic RqJC Junction to Case RqCS RqJA ...
Description	CAP CER 250VAC 150PF X7R 1808 P-CHANNEL POwER MOSFET
File Size	25.33K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9410
OCR Text	... RDS(on) = 0.030 T o p V ie w Recommended upgrade: IRF7403 or IRF7413 Lower profile/smaller equivalent: IRF7603 Description Fifth G...static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
File Size	103.18K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520NL IRF9520NS
OCR Text	... (1.6mm from case ) Units A w w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PC...static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(B...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
File Size	151.66K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520N
OCR Text	... 10 lbfin (1.1Nm) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source...
Description	Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
File Size	91.94K / 8 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF9530-220M
OCR Text	...123 12.70 19.05 -100V -9.3A w 0.31w 10.41 10.92 2.54 BSC 2.65 2.75 * HERMETICALLY SEALED TO-220 METAL PACKAGE * SIMPLE DRIVE...static ELECTRICAL RATINGS Drain - Source Breakdown Voltage Test Conditions VGS = 0 ID = 1mA VGS ...
Description	P-CHANNEL POwER MOSFET FOR HI.REL APPLICATIONS
File Size	18.21K / 2 Page	View it Online	Download Datasheet

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