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NXP Semiconductors N.V.
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| Part No. |
BUK626R2-40C BUK626R2-40C-15
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| OCR Text |
... t mb =25c; see figure 2 - 128 w t stg storage temperature -55 175 c t j junction temperature -55 175 c source-drain diode i s source curre...mounting base temperature fig 2. normalized total power dissipation as a function of mounting base ... |
| Description |
N-channel TrenchMOS intermediate level FET
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| File Size |
183.45K /
14 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK624R5-30C
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| OCR Text |
... t mb =25c; see figure 2 - 158 w t stg storage temperature -55 175 c t j junction temperature -55 175 c source-drain diode i s source curre...mounting base temperature fig 2. normalized total power dissipation as a function of mounting base ... |
| Description |
N-channel TrenchMOS intermediate level FET
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| File Size |
177.31K /
14 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BT150-500R
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| OCR Text |
... - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operatin...mounting base r th j-a thermal resistance in free air - 60 - k/w junction to ambient static characte... |
| Description |
Thyristor
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| File Size |
117.52K /
8 Page |
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it Online |
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Nexperia
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| Part No. |
ES1DVR
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| OCR Text |
...pation t amb 25 c [2] - 1.19 w t j junction temperature - 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c [...mounting pad for cathode 1 cm 2 . 9. thermal characteristics table 6. thermal characteristics symbo... |
| Description |
200 V, 1 A hyperfast PN-rectifier
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| File Size |
204.74K /
14 Page |
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it Online |
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Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RM400HV-34S
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| OCR Text |
... 50 0.09 0.033 Unit mA V s C C/ w C/ w
Aug.1999
MITSUBISHI FAST RECOVERY DIODE MODULES
RM400HV-34S
HIGH SPEED SwITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM FORwARD CHARACTERISTIC 10 3 Tj=25C 7 5 Irr (A), Qrr (C) 3 2... |
| Description |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SwITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
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| File Size |
68.61K /
3 Page |
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it Online |
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Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
RM20TN-H RM20
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| OCR Text |
w
M
U
V
Description: Mitsubishi Three-Phase Diode Bridge Modules are designed for use in applications requiring rectification of...mounting base plate for easy mounting on a common heatsink with other components. Features: Isolated... |
| Description |
Three-Phase Diode Bridge
Rectifier Diode Modules for ASIPM
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| File Size |
26.81K /
2 Page |
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it Online |
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