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  vdss-30v Datasheet PDF File

For vdss-30v Found Datasheets File :: 5479    Search Time::1.875ms    
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    ADPOW[Advanced Power Technology]
Part No. APT4015AVR
OCR Text ... S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC ...30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) APT Website - http://www.advancedpowe...
Description POWER MOS V 400V 25.5A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.92K  /  4 Page

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    RJK0629DPE-00-J3 RJK0629DPE

Renesas Electronics Corporation
Part No. RJK0629DPE-00-J3 RJK0629DPE
OCR Text VDSS: 60 V * RDS(on): 4.5 m (Max) * ID: 85 A REJ03G1874-0100 Rev.1.00 Dec 15, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package n...30V, ID= 43A, VGS = 10 V, RG = 4.7 IF = 85 A, VGS = 0 Note4 IF = 85 A, VGS = 0, diF/dt = 100 A/s...
Description N Channel Power MOS FET High-Speed Switching Use

File Size 109.15K  /  7 Page

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    ADPOW[Advanced Power Technology]
Part No. APT10M11LV APT10M11LVR
OCR Text ... S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC ...30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) APT Website - http://www.advancedpowe...
Description POWER MOS V 100V 100A 0.011 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

File Size 65.14K  /  4 Page

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    APT5010B2LC APT5010LLC

ADPOW[Advanced Power Technology]
Part No. APT5010B2LC APT5010LLC
OCR Text ...Tested MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC ...30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) APT Website - http://www.advancedpowe...
Description Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

File Size 117.68K  /  2 Page

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    APT5010B2LL APT5010LLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2LL APT5010LLL
OCR Text ...ge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage B2LL T-MAXTM TO-264 ...30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitiv...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 55.78K  /  2 Page

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    APT5010B2VFR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT5010B2VFR
OCR Text ... S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC ...30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) APT Website - http://www.advancedpowe...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 64.50K  /  4 Page

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    APT5010B2VR APT5010B2VRG

ADPOW[Advanced Power Technology]
Advanced Power Technolo...
Part No. APT5010B2VR APT5010B2VRG
OCR Text ... S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC ...30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) APT Website - http://www.advancedpowe...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
New T-MAX?Package (Clip-mounted TO-247 Package)

File Size 61.66K  /  4 Page

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    APT5010B2 APT5010B2FLL APT5010LFLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text ... DIODE MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage T-MAXTM TO-264 LFLL ...30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitiv...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 54.02K  /  2 Page

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    APT5010JFLL

ADPOW[Advanced Power Technology]
Part No. APT5010JFLL
OCR Text ...ge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage SO ISOTOP (R) 2 T- 2...30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitiv...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 53.49K  /  2 Page

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    APT5010JLC

Advanced Power Technology Ltd.
Part No. APT5010JLC
OCR Text ...Tested MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter SO ISOTOP (R) 2 T- 27 "UL Recognized" ...30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitiv...
Description POWER MOS VI 500V 44A 0.100 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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