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Samsung Semiconductor Co., Ltd.
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| Part No. |
K4H560438E-ZLB30 K4H560838E-ZLB30
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| OCR Text |
...e 1.1 august 2003 - corrected typo 1.2 october 2004 - corrected typo 1.3 july 2005 - changed master format
rev. 1.3 july. 2005 ddr sdram ddr sdram 256mb e-die (x4, x8) ? vdd : 2.5v 0.2v, vddq : 2.5v 0.2v for ddr333 ? vdd : 2.6v ... |
| Description |
64M X 4 DDR DRAM, 0.7 ns, PBGA60 ROHS COMPLIANT, FBGA-60
32M X 8 DDR DRAM, 0.7 ns, PBGA60 ROHS COMPLIANT, FBGA-60
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| File Size |
385.02K /
24 Page |
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Sensitron Semiconductor
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 K4D263238G-VC K4D263238G-VC330
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| OCR Text |
...8g-vc2a and k4d263238g-vc33. ? typo corrected revision 1.5 (december 29, 2004) ? added tck(min)=5ns @ cl3 ? changed tck(max) of k4d263238g-gc2a from 4ns to 10ns revision 1.4 (november 30, 2004) ? typo corrected in dc table revision ... |
| Description |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144
4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
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| File Size |
431.90K /
20 Page |
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Hynix Semiconductor, Inc.
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| Part No. |
HY5RS123235FP-2 HY5RS123235FP-16 HY5RS123235FP-11 HY5RS123235FP-12
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| OCR Text |
... al definitions page47) table18 typo corrected page48) table19 renewered page50) note 46 added july.2004 cl wl di/wr_a/al speed bin several parameters trpre 0.3 page4) ballout configurations correct appendix c) bst function description aug.... |
| Description |
16M X 32 DDR DRAM, 0.25 ns, PBGA136 12 X 14 MM, LEAD FREE, FBGA-136
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| File Size |
913.59K /
62 Page |
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Hynix Semiconductor, Inc.
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| Part No. |
HY5RS123235BFP-14 HY5RS123235BFP-18L HY5RS123235BFP-08 HY5RS123235BFP-2 HY5RS123235BFP-11
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| OCR Text |
...ghz speed on page 54 2. changed typo for ron on page 15 3. added note.48 on page 53 aug. 2006 preliminary 0.6 1. changed trrd from 16 to 13 and twtr from 8 to 10 at tck=0.8 2. inserted ac parameter value on 800mhz(tck=1.2) for referenc... |
| Description |
16M X 32 DDR DRAM, 0.26 ns, PBGA136 11 X 14 MM, ROHS COMPLIANT, FBGA-136
16M X 32 DDR DRAM, PBGA136 11 X 14 MM, ROHS COMPLIANT, FBGA-136
16M X 32 DDR DRAM, 0.35 ns, PBGA136 11 X 14 MM, ROHS COMPLIANT, FBGA-136
16M X 32 DDR DRAM, 0.22 ns, PBGA136 11 X 14 MM, ROHS COMPLIANT, FBGA-136
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| File Size |
1,104.02K /
67 Page |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
M470T3354EZ3-LD5
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| OCR Text |
... 1.2 january 2007 - corrected typo 1.3 april 2007 - added the bookmark 1.4 april 2007 - corrected typo
rev. 1.4 april 2007 ddr2 sdram sodimm 4 of 20 note : 1. ?z? of part number(11th digit) stand for lead-free products. 2. ?3? of p... |
| Description |
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
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| File Size |
343.91K /
20 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
M470T2953CZ0-LD5 M470T2953CZ3-LD5
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| OCR Text |
...g of physical dimension and the typo 1.7 april 2007 - corrected typo.
rev. 1.6 march 2007 sodimm ddr2 sdram page 4 of 20 note : 1. ?z? of part number(11th digit) stand for lead-free products. 2. ?3? of part number(12th digit) stand for du... |
| Description |
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
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| File Size |
345.22K /
20 Page |
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it Online |
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