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Advanced Power Technology
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| Part No. |
APT20GT60BR
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| OCR Text |
...v c v c d.u.t. v ce (sat) t=2us t0-247 package outline apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,52... |
| Description |
Thunderbolt IGBT 600V 40A
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| File Size |
149.28K /
5 Page |
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it Online |
Download Datasheet
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ST Microelectronics
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| Part No. |
STW11NB80
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| OCR Text |
t0-247 powermesh ? mosfet n typical r ds(on) = 0.65 w n extremely high dv/dt capability n 30v gate to source voltage rating n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high... |
| Description |
N-CHANNEL PowerMESH MOSFET
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| File Size |
107.41K /
8 Page |
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it Online |
Download Datasheet |
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IXYS
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| Part No. |
DSEI30-10A DSEI30-10AR
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| OCR Text |
... 150 c2v t vj =25 c 2.4 v v t0 for power-loss calculations only 1.5 v r t t vj = t vjm 12.5 m r thjc 0.9 k/w r thck 0.25 k/w r thja 3...247 ad planar passivated chips very short recovery time extremely low switching losses low i... |
| Description |
Fast Recovery Diodes
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| File Size |
84.62K /
2 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technology
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| Part No. |
20GF120BR
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| OCR Text |
...v c v c d.u.t. v ce (sat) t=2us t0-247 package outline apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,52... |
| Description |
Search --To APT20GF120BR
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| File Size |
106.14K /
5 Page |
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it Online |
Download Datasheet |
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意法半导
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| Part No. |
W15NB50
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| OCR Text |
t0-247/isowatt218 powermesh ? mosfet n typical r ds(on) = 0.33 w n extremely high dv/dt capability n 30v gate to source voltage rating n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the ... |
| Description |
N-CHANNEL 500V - 0.33ohm - 14.6A - t0-247/ISOWATT218 PowerMESH MOSFET
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| File Size |
97.66K /
9 Page |
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it Online |
Download Datasheet |
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IXYS
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| Part No. |
DSEI30-12A
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| OCR Text |
... c 2.2 v t vj =25 c 2.55 v v t0 for power-loss calculations only 1.65 v r t t vj = t vjm 18.2 m r thjc 0.9 k/w r thck 0.25 k/w r thja ...247 ad planar passivated chips very short recovery time extremely low switching losses low i... |
| Description |
Fast Recovery Diodes
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| File Size |
44.21K /
2 Page |
View
it Online |
Download Datasheet |
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NEC Electronics
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| Part No. |
UPD703111
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| OCR Text |
...ition of 4.14 timing at which t0 state is not inserted pp.214 to 217 addition of timing and modification of notes in figure 5-9 sdram ...247 addition of internal instruction ram in block diagram in 6.2 configuration p.248 addition to ... |
| Description |
32-Bit Single-Chip Microcontrollers
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| File Size |
6,834.25K /
957 Page |
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it Online |
Download Datasheet |
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IXYS
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| Part No. |
DSEK60-02A DSEK60-02AR
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| OCR Text |
... c 0.85 v t vj =25 c 1.10 v v t0 for power-loss calculations only 0.72 v r t t vj = t vjm 4.2 m ? r thjc 1 k/w r thch 0.5 k/w t rr i f =...247 ad planar passivated chips very short recovery time extremely low switching losses low i rm ... |
| Description |
Fast Recovery Diodes
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| File Size |
99.02K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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