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				TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	IRF9130SMD
OCR Text	...DS = 0.5BVDSS VDD = 50V ID = 8A rg = 7.5W ID = 8A ID = 5A ID = 8A ID = 250mA IDS = 5A VDS = 0.8BVDSS TJ = 125C ID = 1mA Min. 100 Typ. Max. Unit V DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain...
Description	P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	20.44K / 2 Page	View it Online	Download Datasheet

				SEMELAB LTD SEME-LAB[Seme LAB]
Part No.	IRF9140
OCR Text	...2% 2) @ VDD = -25V , L 2.3mH , rg = 25 , Peak IL = -18A , Starting TJ = 25C 3) @ ISD -18A , di/dt -100A/s , VDD BVDSS , TJ 150C , Suggested rg = 9.1 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Pre...
Description	P-CHANNEL POWER MOSFET
File Size	21.26K / 2 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	...igure 12) VDD = -50V, ID -25A, rg = 6.8, RL = 2.0, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature MIN -100 -2 -25 4 - TYP 0.09 10 16 110 65 46 82 14 42 2400 850 400 5.0 MAX -4 -25 -250...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text	...S =-100V VDD =-100V, ID =-6.5A, rg =7.5 IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On De...
Description	TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) CAP CER 250VAC 82PF 5% SL 1808 6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	148.64K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9410
OCR Text	...15 VDD = 25V 17 ID = 1.0A ns 46 rg = 6.0, VGS = 10V 34 RD = 25 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) ...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
File Size	103.18K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520NL IRF9520NS
OCR Text	...DD = -50V --- ID = -4.0A ns --- rg = 22 --- RD = 12, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 350 --- VGS = 0V 110 --- pF VDS = -25V 70 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM ...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
File Size	151.66K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520N
OCR Text	...DD = -50V --- ID = -4.0A ns --- rg = 22 --- RD = 12, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and...
Description	Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
File Size	91.94K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9520 FN2281
OCR Text	...= 0.5 x Rated BVDSS, ID -6.0A, rg = 50 , RL = 7.7 for VDSS = 50 MOSFET Switching Times are Essentially Independent of Operating Temperature - - 4.5 - nH Internal Source Inductance LS Measured From the Source Lead, 6...
Description	6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
File Size	57.36K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF9530-220M
OCR Text	... 0.5BVDSS VDD = -50V ID = -9.3A rg = 7.5W ID = -9.3A ID = -5.8A ID = -9.3A ID = 250mA IDS = -5.8A VDS = 0.8BVDSS TJ = 125C ID = 1mA Min. -100 Typ. Max. Unit V DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on)...
Description	P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	18.21K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text	...DD = -50V --- ID = -8.4A ns --- rg = 9.1 --- RD = 6.2, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM V SD t rr Q...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	169.24K / 10 Page	View it Online	Download Datasheet

For rg rg Found Datasheets File :: 39755 Search Time::1.469ms
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