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Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
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| Part No. |
CGY60 Q62702G-39
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| Description |
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems)
From old datasheet system
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems) 砷化镓微波单片集成电路（低移动通信PCN中的DECT，在2.7VV系统GSM噪声前置放大器）
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| File Size |
38.60K /
7 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
Q62702-F1042 BF554
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| Description |
From old datasheet system
NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier/ mixer and oscillator circuits)
NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits) NPN硅射频晶体管（对于一般的小信号射频应用在放大器，混频器和振荡器电00兆赫
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| File Size |
59.92K /
4 Page |
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it Online |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BF543 Q62702-F1372
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| Description |
From old datasheet system
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)
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| File Size |
97.28K /
5 Page |
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it Online |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BB837 Q62702-B0904
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| Description |
Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units)
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| File Size |
42.83K /
3 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62702-A1145 BAR81
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| Description |
From old datasheet system
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
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| File Size |
46.21K /
3 Page |
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it Online |
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